Abstract:In this Letter, the degradation mechanism of Schottky p-type GaN (P-GaN) gate stack in GaN power devices under neutron irradiation is studied. After 1-MeV neutron irradiation at fluences of 6 × 1013 and 1 × 1014 neutron/cm2, device threshold voltage VTH is positively shifted and gate leakage current is increased, which indicates the degradation of Schottky P-GaN gate stack. By analyzing the gate current with Frenkel–Poole emission model, barrier height of Schottky P-GaN gate stack is reduced due to the traps induced by neutron irradiation. By employing capacitance–voltage (C–V) and pulse current–voltage (I–V) measurements, we find that the electron and hole traps induced by displacement damages dominate the degradation of gate characteristics after neutron irradiation. Electron traps at EC- (0.38–0.55) eV and hole traps at EV+ (0.56–0.62) eV with a density of 1011–1012 cm−2 eV−1 are shown in irradiated devices. Ionizations of VGa and Gai induced by neutron radiation as well as their interaction with dislocations significantly alter the energy band of P-GaN/AlGaN/GaN heterostructure gate stack. The trapping and de-trapping processes of VGa-related electron traps lead to positive shifts in VTH. Passivation of dislocations by Gai effectively lowers the barrier height for holes and increases the gate leakage current. Measures to improve the quality of P-GaN/AlGaN/GaN heterostructure or raise the potential barrier height can be taken to make the device more resistant to neutron radiation. This work depicts the physical process and mechanism of degradations in Schottky P-GaN gate stack, which can provide deeper insights into the analysis and field application of GaN power devices under neutron irradiation.

Total-Ionizing-Dose Radiation Induced Gate Damage in High Voltage P-GaN Gate HEMTs

Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs