Electrically Manipulating Magnetization Reversal Via Energy Band Engineering

Junwei Tong,Yanzhao Wu,Feifei Luo,Fubo Tian,Xianmin Zhang
DOI: https://doi.org/10.1007/s11433-022-2083-0
2023-01-01
Science China Physics Mechanics and Astronomy
Abstract:Realization of a magnetization reversal by an external electric field is vital for developing ultra-low-power spintronic devices. In this report, starting from energy band engineering, a general design principle is proposed for achieving electrical manipulation of a nonvolatile 180° magnetization reversal. A half semiconductor (HSC) and a bipolar magnetic semiconductor (BMS) are selected as the model of magnetic layers, whose conduction-band minimum and valence-band maximum are in the same and opposite spin states, respectively. Based on the analysis of virtual hopping and tight-binding models, the interlayer coupling of HSC/insulator/BMS devices is successfully tuned between ferromagnetic and antiferromagnetic interactions by varying electric field directions. Moreover, the interlayer coupling nearly disappears after removing the electric field, proving the nonvolatile magnetization reversal. Using first-principles calculations, the feasibility of present design strategy is further confirmed by a representative device with the structure of CrBr 3 /h-BN/2H-VSe 2 . This design guideline and physical phenomena may open an avenue to explore magnetoelectric coupling mechanisms and develop next-generation spintronic devices.
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