Abstract:Interlayer excitons have been extensively studied in monolayer transition metal dichalcogenide (TMD) heterobilayers mainly due to the long lifetime, which is beneficial for a wide range of optoelectronic applications. To date, the majority of investigations of interlayer excitons in TMD heterobilayers have been focusing on the geometric arrangement of structures, spin-valley lifetime, and interlayer valley excitons with interlayer hopping rules. Nevertheless, interlayer excitons in TMD heterobilayers strongly depend on the local atomic registry and coupling strength, which increase the complexity of the device fabrication. Here, we report pronounced interlayer exciton emission in two-dimensional (2D) perovskite/monolayer TMD heterostructures without the need of thermal annealing or specific geometric arrangements, and the interlayer exciton emission is rather general among 2D perovskites and monolayer TMDs. Such interlayer exciton emission completely dominates the emission spectrum at 78 K regardless of the stacking sequence, suggesting the robust interlayer coupling in 2D perovskite/monolayer TMD heterostructures. Furthermore, the interlayer exciton emission shows a large blue-shift with increasing laser intensity due to the repulsive dipole-dipole interaction and can persist above 220 K. Importantly, the interlayer exciton emission also possesses robust circular polarization in chiral 2D perovskite/monolayer WSe2 heterostructures, which can be applied to manipulate the valley degree of freedom for valleytronic devices. Our findings would provide a favorable platform to explore interlayer coupling and related physical processes in 2D perovskites and TMDs and further provoke more investigations into the understanding and controlling of excitonic effects and associated optoelectronic applications in van der Waals heterostructures over a broad-range spectral response.

Exciton Linewidth and Exciton‐Phonon Coupling in 2H and 3R Bilayer WS2 Studied by Magnetic Circular Dichroism Spectrum

Ultrathin WS2‐on‐Glass Photonic Crystal for Self‐Resonant Exciton‐Polaritonics

Phonon and Exciton Properties between WS 2 and MoS 2 Layers via Inversion Heterostructure Engineering

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Room-Temperature Observation of Near-Intrinsic Exciton Linewidth in Monolayer WS2

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Tailoring Photoluminescence of WS2-microcavity Coupling Devices in Broad Visible Range

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Thickness-dependent variations of atomic vibration, band-edge excitonic emission, and valleytronic response in layered Mo 0.55 W 0.45 S 2 ternary compounds

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Stacking-dependent exciton multiplicity in WSe$_2$ bilayers

Three-Dimensional Resonant Exciton in Monolayer Tungsten Diselenide Actuated by Spin-Orbit Coupling

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Observation of quantum-confined exciton states in monolayer WS2 quantum dots by ultrafast spectroscopy

Interlayer exciton landscape in WS2/tetracene heterostructures

Influence of Edges and Interlayer Electron-phonon Coupling in WS2/h-BN Heterostructure