Transport and thermoelectric properties of penta-Sb<sub>2</sub>X monolayers

Nan Wu,Xiaofeng Fan,David J. Singh,W. T. Zheng
DOI: https://doi.org/10.1039/d2tc05376d
IF: 6.4
2023-01-01
Journal of Materials Chemistry C
Abstract:Thermoelectrics enable direct conversion between heat and electricity, with broad implications for energy and nano-technologies. A key challenge is improving the efficiency of devices, which depends on improved thermoelectric materials. Here we investigate the novel penta-Sb2X (X = Si, Ge, Sn) 2D materials as potential thermoelectrics, using first-principles methods and Boltzmann transport theory. All the three monolayer structures are semiconducting. Sb2Si is found to have excellent electric conductivity with high electron mobility of 4010 cm(2) V-1 s(-1). Sb2Ge and Sb2Sn have very low lattice thermal conductivity of 2.34 and 0.94 W m(-1) K-1. Optimization of the carrier concentration leads to high estimated values of the figure of merit, ZT. We predict the ZT of n-type Sb2Si to be as high as 4.38, while the ZT values of p-type Sb2Ge and Sb2Sn at 700 K are up to 7.37 and 8.0. These results suggest experimental investigation of the semiconducting and thermoelectric properties of these monolayers.
What problem does this paper attempt to address?