A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor

Yuyang Fu,Jinyu Wen,Lun Wang,Ling Yang,Qihang Zhu,Wenbin Zuo,Puyi Zhang,Yi Li,Hao Tong,Guokun Ma,Hao Wang,Xiangshui Miao

DOI: https://doi.org/10.1109/led.2023.3259000

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications ( $>$ 1 Mb/s). Here, we implement a high-speed TRNG with a GeTex ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switching-based TRNG. In addition, the TRNG endurance of ${2}\times {10} ^{{9}}$ bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high–throughput and highly secure solution for edge applications.