GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

Zheng Chai,Wei Shao,Weidong Zhang,James Brown,Robin Degraeve,Flora D. Salim,Sergiu Clima,Firas Hatem,Jian Fu Zhang,Pedro Freitas,John Marsland,Andrea Fantini,Daniele Garbin,Ludovic Goux,Gouri Sankar Kar

DOI: https://doi.org/10.1109/led.2019.2960947

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ~ 50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.