Abstract:Electronic devices based on organic semiconductors offer an attractive alternative to conventional inorganic devices due to potentially lower costs, simpler packaging and compatibility with flexible substrates1,2. As is the case for silicon-based microelectronics, the use of complementary logic elements—requiring n- and p-type semiconductors whose majority charge carriers are electrons and holes, respectively—is expected to be crucial to achieving low-power, high-speed performance. Similarly, the electron-segregating domains of photovoltaic assemblies require both n- and p-type semiconductors3,4,5. Stable organic p-type semiconductors are known6, but practically useful n-type semiconductor materials have proved difficult to develop, reflecting the unfavourable electrochemical properties of known, electron-demanding polymers7. Although high electron mobilities have been obtained for organic materials, these values are usually obtained for single crystals at low temperatures, whereas practically useful field-effect transistors (FETs) will have to be made of polycrystalline films that remain functional at room temperature. A few organic n-type semiconductors that can be used in FETs are known, but these suffer from low electron mobility, poor stability in air and/or demanding processing conditions8,9,10. Here we report a crystallographically engineered naphthalenetetracarboxylic diimide derivative that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions. By integrating our n-channel FETs with solution-deposited p-channel FETs, we are able to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase. We expect that other complementary circuit designs11 can be realized by this approach as well.

Large-Area Monolayer N-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Bottom-up Growth of N-Type Monolayer Molecular Crystals on Polymeric Substrate for Optoelectronic Device Applications

Fabrication of Large-Area Organic Semiconducting Crystalline Thin Films with Controlled Morphology by Antisolvent-Assisted Dip Coating

Millimeter-Sized Two-Dimensional Molecular Crystalline Semiconductors with Precisely Defined Molecular Layers via Interfacial-Interaction-Modulated Self-Assembly.

Wafer‐Scale Fabrication of High‐Performance N‐type Polymer Monolayer Transistors Using a Multi‐Level Self‐Assembly Strategy

2D Single‐Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating‐Coffee‐Ring‐Driven Assembly

2D Molecular Semiconductors: 2D Single‐Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating‐Coffee‐Ring‐Driven Assembly (adv. Funct. Mater. 19/2016)

Capillary‐Confinement Crystallization for Monolayer Molecular Crystal Arrays

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Monolayer molecular diode

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications

Modulating crystallinity and mixed ionic–electronic conduction properties via terminal side chain engineering of n-type small molecules

High-mobility Field-Effect Transistors from Large-Area Solution-Grown Aligned C60 Single Crystals.

Evaporated Nanometer Chalcogenide Films for Scalable High-Performance Complementary Electronics

Low-Voltage P- and N-Type Organic Self-Assembled Monolayer Field Effect Transistors

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A soluble and air-stable organic semiconductor with high electron mobility

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors

High Mobility, Air Stable, Organic Single Crystal Transistors of an N-Type Diperylene Bisimide