Enhanced Thermoelectric Performance of N-Type Filled Skutterudite InxCo4Sb12

Gao Feng,Lei Ying,Jiang Xiaowu,Li Yu,Qiu Jin,Yong Chao,Fan Xingxiang,Wan Rundong
DOI: https://doi.org/10.1007/s10854-022-09806-1
2023-01-01
Journal of Materials Science Materials in Electronics
Abstract:In-single-filled InxCo4Sb12 skutterudite was synthesized from high-purity raw materials by microwave heating for 5 min, and the bulk materials with 7.26–7.64 g cm−3 density are subsequently achieved after annealing and spark plasma sintering. The XRD detected results show that all major diffraction peaks are indexed to the body-centered cubic CoSb3 and InSb secondary phase which are found to be present in all samples. Pores and dislocations are observed in InxCo4Sb12, while those microstructure characteristics may reduce the lattice thermal conductivity by scattering different frequency phonons. Indium atoms optimize the carrier concentration and InSb may act as an n-type dopant to provide impurity carriers and increase the mobility. The optimal carrier concentration is obtained as 4.77 × 1020 cm−3 in In0.6Co4Sb12. The maximum power factors of 3720 μWm−1 K−2 are observed from In0.4Co4Sb12. The lattice thermal conductivity of In0.6Co4Sb12 was effectively reduced to 1.12 Wm−1 K−1. The highest ZT of 1.15 appears at 773 K and possible larger values can be achieved at a higher temperature.
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