Abstract:Filling guest atoms into the nanovoids of skutterudite compounds provides effective scattering for low-frequency phonons to reduce the lattice thermal conductivity. However, it is still difficult to simultaneously realize the full-spectrum phonon scattering and band engineering in the n-type skutterudites with higher thermoelectric performance. Here, we reveal that the combination of five types of element atoms in the lattice nanovoids brings about dense dislocations, abundant precipitated nanoparticles, and electronic band convergence in the n-type skutterudites. The Seebeck coefficient shows an increase with little deterioration on the carrier mobility due to the enhanced density of states near the Fermi level, leading to a 11% enhancement in the power factor at 823 K. The lattice thermal conductivity is significantly reduced to approach the glass limit due to the full-spectrum phonon scattering. As a result, a peak ZT value of about 1.7 at 823 K and an average ZT value of about 1.2 from 323 to 823 K are obtained. High thermoelectric performance combined with the structural optimization enables the simulated maximum energy conversion efficiency of the skutterudite module to reach up to 15.0%. Our finding opens a new dimension for doping atoms to achieve simultaneous optimization of electrical and thermal properties in polynary thermoelectric materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c06267?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c06267</a>.Materials and Methods; microstructure evolution mechanisms during the synthesis of n-type skutterudites; calculation of the electronic band structures; calculation of the lattice thermal conductivity; calculation of the actual energy conversion efficiency of the skutterudite thermoelectric module; anharmonicity parameters of filling elements; fitting parameters for the multiple-filled skutterudites; TEM images of dislocation loops; TEM images of dislocation walls; microstructure evolution from melt-spinning ribbons to bulk skutterudite materials; scanning TEM–EDS elemental mapping images of the precipitated nanoparticles; electronic band structures of Yb0.25Co4Sb12 and Ca0.25Co4Sb12; electronic band structures of Yb0.25In0.125Co3.75Fe0.25Sb12 and Yb0.25Al0.125In0.125Co3.75Fe0.25Sb12; energy dependence of the total electronic DOS; In-atom-centered maximally localized Wannier functions in the InCo4Sb12 crystal; BSE images of the resynthesized multiple-filled sample after three times of measurements or heat treatment; thermoelectric performance of the resynthesized multiple-filled sample after three times of measurements or heat treatment; thermoelectric performance parameters of n-type and p-type skutterudites used in the thermoelectric module simulation model; maximum output power and maximum energy conversion efficiency as a function of the geometry parameters of the thermoelectric leg; and hot-side temperature dependence of the internal resistance of the unicouple (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c06267/suppl_file/am1c06267_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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