Abstract:Laser-assisted diamond cutting is a promising method for the cost-effective machining of hard and brittle materials. A deep knowledge of the material removal mechanism and the attainable surface integrity is crucial to the development of this new technique. This paper focuses on the application of laser-assisted diamond cutting to single-crystal silicon to investigate key characteristics of the process. These characteristics are the critical depth of cut for ductile–brittle transition, machined surface roughness, resultant micro-cutting force, friction coefficient, temperature distribution, microstructure change, and the subsurface damage of the machined silicon. Laser-assisted diamond cutting method is compared with the conventional single-point diamond cutting method. The experimental results reveal that laser-assisted diamond cutting can enhance the silicon’s ductility and machinability by decreasing the softened material’s hardness and promoting the atomic activity in the subsurface layer. The critical depth of cut has been increased by up to 364% with laser assistance, and its degree generally increases with the increase of temperature. The friction coefficient has been decreased by up to 27.95%. The cross-sectional transmission electron microscope observation results indicate that laser-assisted diamond cutting is able to effectively inhibit the formation of the distorted layer and produce less subsurface damage of single-crystal silicon. In comparison to the conventional single-point diamond turning of single-crystal silicon, a significant improvement of surface quality has been obtained by laser-assisted diamond cutting: Sz has been reduced by 87%, and Sa has been reduced by 50%.

Investigation of the Material Removal Process in In-Situ Laser-Assisted Diamond Cutting of Reaction-Bonded Silicon Carbide

Cutting mechanism of reaction-bonded silicon carbide in laser-assisted ultra-precision machining

Defect Suppression Mechanism for Laser In-Situ Assisted Diamond Cutting of Reaction-Bonded Silicon Carbide

Subsurface Deformation and Crack Propagation Between 3C-Sic/6h-sic Interface by Applying In-Situ Laser-Assisted Diamond Cutting RB-SiC

Experimental Investigation of the Machinability of Single Crystal Silicon in Laser-Assisted Diamond Cutting

Investigation on the machinability of SiCp/Al composite by in-situ laser assisted diamond cutting

Brittle-to-ductile Transition in Elliptical Vibration-Assisted Diamond Cutting of Reaction-Bonded Silicon Carbide

Machining Characteristics And Removal Mechanisms Of Reaction Bonded Silicon Carbide

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC

Simulation and experimental study on limited cutting and heat effect of silicon carbide

Analysis of Diamond Wheel Wear and Surface Integrity in Laser-Assisted Grinding of RB-SiC Ceramics

Improved Machinability of Single Crystal Silicon by Applying In-Situ Laser-Vibration Hybrid Assisted Diamond Cutting

Investigation into the Role of Si and SiC Phases in RB-SiC Ceramics Surface Modified Ultra-Precision Grinding

Surface/subsurface Observation and Removal Mechanisms of Ground Reaction Bonded Silicon Carbide

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Investigation on the impact of thermal softening effect induced by nanosecond pulsed laser-assisted cutting on the deformation mechanism of SiCp/Al composites

Experimental and Theoretical Investigation on the Ductile Removal Mechanism in In-Situ Laser Assisted Diamond Cutting of Fused Silica

Enhancing the Ductile Machinability of Single-Crystal Silicon by Laser-Assisted Diamond Cutting

Experimental Investigation on Laser In-Situ Assisted Ultra-Precision Cutting of Fused Silica

Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Experimental Analysis of Ductile Cutting Regime in Face Milling of Sintered Silicon Carbide