GaN Quasi-Vertical Trench MOSFETs Grown on Si Substrate with ON-current Exceeding 1 A

Renqiang Zhu,Huaxing Jiang,Chak Wah Tang,Kei May Lau
DOI: https://doi.org/10.35848/1882-0786/aca26e
IF: 2.819
2022-01-01
Applied Physics Express
Abstract:This work reports GaN quasi-vertical trench MOSFETs grown on 6-inch Si substrates. The device with single-trench design shows a specific ON-resistance of 0.84 m Omega.cm(2), a maximum drain current density of 5.0 kA cm(-2), and a breakdown voltage of 320 V, after fine-tuning of the channel doping and employment of a thick bottom dielectric process. The large-area (similar to 0.54 mm(2)) GaN-on-Si trench MOSFET with multiple-finger design shows an ON-current of 1.1 A, an ON-resistance of 4.0 Omega and a breakdown voltage of 205 V. (C) 2022 The Japan Society of Applied
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