Abstract:The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm-3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm-3 and 1 × 1015 cm-3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77-300 K).

Bandwidth Characteristics of Mid-Wavelength Infrared PIN HgCdTe Avalanche Photodiodes

Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Enhanced Performance of HgCdTe Midwavelength Infrared Electron Avalanche Photodetectors with Guard Ring Designs

Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths

Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

Design of a Bandgap-Engineered Barrier-Blocking HOT HgCdTe Long-Wavelength Infrared Avalanche Photodiode

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Investigation of HgCdTe avalanche photodiodes for HOT condition

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes with Bandgap Gradient Multi-Layer Heterojunction

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure