Low dielectric loss, colossal permittivity, and high breakdown electric field in Al-doped Y2/3Cu3Ti4O12 ceramics
Zhanhui Peng,Xing Wang,Fudong Zhang,Shudong Xu,Juanjuan Wang,Di Wu,Pengfei Liang,Lingling Wei,Xiaolian Chao,Zupei Yang
DOI: https://doi.org/10.1016/j.ceramint.2022.04.177
IF: 5.532
2022-04-01
Ceramics International
Abstract:The miniaturization and high capacitance of electronic components are driving the development of high-performance electronic ceramic materials. In this work, we design a new strategy to achieve satisfactory dielectric properties with low loss, colossal permittivity, and a high breakdown electric field (E b) in Al-doped Y2/3Cu3Ti4O12 (YCTO) ceramics prepared by a solid-phase synthesis method. The dielectric loss decreased with Al doping in the YCTO. The dielectric constant and the E b were improved upon Al doping. With Al doping levels of 0.03 and 0.05, Y2/3Al0.03Cu2.97Ti4O12 and Y2/3Al0.05Cu2.95Ti4O12 ceramics displayed, respectively, a suppressed loss tangent of about 0.028 and 0.031, a high dielectric constant of approximately 9540 and 11792, and an E b of approximately 4.32 and 4.54 kV/cm. The improved dielectric properties of the produced ceramics were closely linked to enhanced grain boundaries resistance. This study explores the physical mechanism behind the high performance of the YCTO-based ceramics, and also provides theoretical support for the application of devices comprising YCTO and related materials.
materials science, ceramics