Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

Enhancing the Fabrication Yield of NV Centers in Diamond by Pre-Doping Using Molecular Dynamics Simulation

Molecular Dynamics Simulation Study of Nitrogen Vacancy Color Centers Prepared by Carbon Ion Implantation into Diamond

Insight into the Nitrogen-Vacancy Center Formation in Type-Ib Diamond by Irradiation and Annealing Approach

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Diamond-defect engineering of NV- centers using ion beam irradiation

Impact of Annealing and Nanostructuring on Properties of NV Centers Created by Different Techniques

Creation of color centers in diamond by recoil implantation through dielectric films

Creation of shallow nitrogen vacancy centers in HPHT diamond surface via catalytic etching of transition metal

Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?

Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Efficient Generation of Nitrogen Vacancy Centers by Laser Writing Close to the Diamond Surface with a Layer of Silicon Nanoballs

Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching

Enhancing Quantum Sensing Performance by Optimizing the Concentration and Dephasing Time of the NV Ensemble in CVD-diamond

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Improving the NV Generation Efficiency by Electron Irradiation

Creation of NV centers in diamond under 155 MeV electron irradiation

Quantitative Analysis of Spectral Characteristics and Concentration of Ensembles of NV− Centers in Diamond

Absorption and birefringence study for reduced optical losses in diamond with high NV concentration