Excellent spin-filtering and giant tunneling magnetoresistance in a dual-electrode van der Waals magnetic tunnel junction based on ferromagnetic CrSe2

Jindi Feng,Kunpeng Li,Mingkun Zheng,Wancheng Zhang,Yong Liu,Dengjing Wang,Zhenhua Zhang,Chao Zuo,Rui Xiong,Zhihong Lu

DOI: https://doi.org/10.1016/j.apsusc.2022.155588

IF: 6.7

2023-01-01

Applied Surface Science

Abstract:Magnetic tunnel junctions (MTJs) both with efficient spin-filtering effect and large tunneling magnetoresistance (TMR) ratio are extremely attractive and highly desirable in the field of spintronics. Inspired by recent successful preparation of a stable two-dimensional (2D) layered ferromagnet 1T-CrSe2 on a 2H-WSe2 substrate via chemical vapor deposition (CVD) synthesis, herein, employing first-principles calculations, we investigate the spin-dependent transport properties of van der Waals (vdW) MTJs built with a monolayer 2H-WSe2 tunnel barrier and a 1T-CrSe2 single-electrode or a 1T-MoSe2/1T-CrSe2 dual-electrode. Compared to low TMR (67.3%) in single-electrode MTJ, dual-electrode MTJ exhibits excellent spin-filtering effect (with 99.96% spin polarization) and a giant TMR ratio (up to 2.29 × 105%), which mainly originates from the half-metallicity of CrSe2 induced by charge transfer at MoSe2/CrSe2 interface. Relatively high TMR values (over 1 × 103%) are always maintained at small bias voltages (|Vb| ≤ 0.35 V). Our work have for the first time theoretically verified feasibility of realizing the transition of 2D CrSe2 from metallicity to half-metallicity in the vdW MTJ and yielding excellent spin-filtering and giant magnetoresistance via electrode interface engineering, thereby providing important theoretical guidance for the experimental design of high-performance vdW MTJs in spintronic devices.