Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

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Two-step Chemical Vapor Deposition Synthesis of NiTe2-MoS2 Vertical Junctions with Improved MoS2 Transistor Performance.

Synthesis of Large-Sized Van Der Waals Layered MoO3 Single Crystals with Improved Dielectric Performance

Physical Vapor Deposition Growth of Ultrathin Molybdenum Dioxide Nanosheets with Excellent Conductivity

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Controlled Synthesis of Submillimeter Non‐layered WO2 Nanoplates via a WSe2‐Assisted Method

A Controllable Synthesis of Uniform MoS2 Monolayers on Annealed Molybdenum Foils

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS 2 Films

Metallic Contact Between MoS2 and Ni Via Au Nanoglue

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Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition

Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals