Realizing the Switching of Optoelectronic Memory and Ultrafast Detector in Functionalized‐Black Phosphorus/MoS2 Heterojunction

Chang Liu,Shuimei Ding,Qianlei Tian,Xitong Hong,Wanhan Su,Lin Tang,Liming Wang,Mingliang Zhang,Xingqiang Liu,Yawei Lv,Johnny C. Ho,Lei Liao,Xuming Zou
DOI: https://doi.org/10.1002/lpor.202200486
2023-01-01
LASER & PHOTONICS REVIEWS
Abstract:A single device with switchable functions is highly attractive to the growing demands of complex optoelectronics. However, most of the currently reported devices either exhibit a lack of multifunction operation or require complex electrode configurations with limited performances. Here, a new concept of a functionalized-black phosphorus (f-BP)/MoS2 heterojunction is proposed, which enables the coexistence of an optoelectronic memory and a detector in a single device. The oxidation-induced artificial-traps on the BP surface result in a gate-modulated photogating effect, so that the device can be freely switched between memory and detector by simply changing the back-gate voltage. In the memory model, the device has an ultra-long storage time (10 years), an ultra-high on/off ratio (3.5 x 10(7)), and outstanding multi-bit storage (approximate to 90 states), while in the detector model, the device still exhibits a fast response (130/260 mu s), an impressive responsivity (22.2 A W-1), and self-driven broadband detection (ultraviolet to near-infrared). Most importantly, the highly anisotropic BP enables fast NIR polarization resolution with a maximum polarization ratio of 6.98 at 1064 nm.
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