A New Opportunity for the Emerging Tellurium Semiconductor: Making Resistive Switching Devices.
Yifei Yang,Mingkun Xu,Shujing Jia,Bolun Wang,Lujie Xu,Xinxin Wang,Huan Liu,Yuanshuang Liu,Yuzheng Guo,Lidan Wang,Shukai Duan,Kai Liu,Min Zhu,Jing Pei,Wenrui Duan,Dameng Liu,Huanglong Li
DOI: https://doi.org/10.1038/s41467-021-26399-1
IF: 16.6
2021-01-01
Nature Communications
Abstract:The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.