Abstract:With the purpose to continuously improve the speed and density of chip operation, the size of the transistors and the spacing between the transistors have been shrinking, following what is called the Moore's law in the last 40 years. When the logic process node reaches 3 nm or smaller, the room for the improvement in FinFET architecture is no longer available. Complementary FET (CFET) structure has been proposed to continue the performance improvement through area reduction with the NMOS placed on top of the PMOS. In this paper, through the use of a self-developed simulation program, we study the typical design rule patterns of the back-end-of-line (BEOL) metal and via layers from 3 nm and 2 nm logic processes. From the development roadmap of transistors, it can be seen that the pitch of BEOL metal layer from 3 nm CFET is around 20~24 nm, which can be realized by 0.33 NA Extreme Ultra-Violet (EUV) lithography with double pattering scheme using self-aligned litho-etch-litho-etch (SALELE) process. Taking 40~48 nm as the anchoring pitch, in order to obtain enough process windows, we make detailed design rules for some typical 2D patterns (such as dense pattern, semi-dense pattern, isolated pattern, Tip-to- Tip (TtT) and Tip-to-Line (TtL) patterns, etc.), and we can also calculate the minimum area of isolated patterns. The pitch of BEOL metal layer from 2 nm FinFET is assumed to be 14~18 nm, for which we have done process window simulation under both 0.33 NA and 0.55 NA EUV processes. We will compare both exposure processes on exposure energy, exposure latitude, line width roughness, and defect density originated from photon absorption stochastics. We will present a study on both the process cost and performance for the 3 and 2 nm photo processes.

A CDU Budget and Process Window Study with EUV Lithography for 3 Nm CFET Logic Processes and an Outlook for Future Generations

The Discussion of the Typical BEOL Design Rules from 3 Nm to 2 Nm Logic Process with EUV and High NA EUV Lithography

A Study of Diffraction Based Overlay (DBO) on a 3 Nm CFET Metal Layer

5 NM FIN SAQP PROCESS DEVELOPMENT AND KEY PROCESS CHALLENGE DISCUSSION

Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

A Study of the Advantages to the Photolithography Process Brought by the High NA EUV Exposure Tool in Advanced Logic Design Rules

A Study of 3nm CFET Middle-of-the-line Contact Layer OCD Measurement Sensitivity

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

The Possibility of Using 193 NM Immersion Lithography Process for 5 NM Logic Design Rules

EUVL Gen 2.0: Key requirements for constraining semiconductor cost in advanced technology node manufacturing

A MEOL Logic Layout Optimization Recommendation under 3 Nm CFET Architecture and Beyond

Considerations in the Setting Up of Industry Standards for Photolithography Process, Historical Perspectives, Methodologies, and Outlook

Advanced lithography technology in IEECAS

What is prevalent CD-SEM's role in EUV era?

The Research on the Fabrication of the Novel Basic Unit for 3D Structure Integrated Circuit

Overlay and CD uniformity variation due to wafer thermal deformation caused by EUV exposure

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Research of High-Transmission Phase-Shift Mask on Critical Dimension Uniformity in ArF Lithography

Enabling faster VSB writing of 193i curvilinear ILT masks that improve wafer process windows for advanced memory applications

HD SRAM Bitcell Size Shrink Beyond 7nm Node by CFET Without EUV

Investigation and Prediction of Image Placement Errors in Extreme Ultraviolet Lithography Masks