Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

Study on the Effect of External Drain-Source Capacitance on the Turn-On Switching Characteristics of SiC MOSFET Using an Analytical Model

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

Analytical Modeling of SiC MOSFET During Switching Transient

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and <i>Q</i><sub>gd</sub>

An Accurate Analytical Model of SiC MOSFETs for Switching Speed and Switching Loss Calculation in High-Voltage Pulsed Power Supplies

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

Analytical Modeling Of Switching Characteristics Of The Sic Mosfet Based On Finite State Machine

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

Research on Switching Characteristics of SiC MOSFET in Pulsed Power Supply with Analytical Model

A Novel Compact Model of Gate Capacitance for SiC MOSFET with Easy Parameter Extraction Method

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Understanding switching losses in SiC MOSFET: Toward lossless switching

Calculation and Analysis of the Dynamic Turn-on Process of SiC MOSFET Based on a Piecewise Linearization Method

Switching Loss Model of SiC MOSFET Promoting High Frequency Applications