Switching Loss Model of SiC MOSFET Promoting High Frequency Applications

Xuan Li,Xu Li,Liping Yang,Alex Q. Huang,Pengkun Liu,Xiaochuan Deng,Bo Zhang
DOI: https://doi.org/10.1109/ispsd.2019.8757669
2019-01-01
Abstract:In this work, the influence of parasitic capacitance on the switching loss of SiC MOSFET is investigated. The switching loss models considering $\boldsymbol{C}_{\mathbf{gd}}$ and $\boldsymbol{C}_{\mathbf{ds}}$ are obtained. Furthermore, the intrinsic minimum switching loss is identified as the energy dissipation resulting from the parasitic capacitance of the SiC MOSFET. Finally, the intrinsic losses of a number of commercial SiC MOSFETs are compared using the proposed model.
What problem does this paper attempt to address?