Abstract:Antiferromagnetic topological charge, as well as Lorentz forces acting on conduction electrons, can be coupled with Dzyaloshinskii‐Moriya interaction chirality for antiferromagnetic bimerons in multiferroic lattice. Such coupling guarantees the engineer of topological spin Hall effect in a controllable and reversible fashion. Topological spin Hall effect (TSHE), promoted by coupling between noncoplanar spins and real‐space topology, is a significant phenomenon in condensed matter physics. However, the control of TSHE characteristics is missing due to its intrinsic robustness, and such fundamental difficulty prevents it from being used for spintronics up to now. Here, a rational design approach is demonstrated to engineer TSHE in a controllable and reversible fashion. Through symmetry and model analysis, it is unveiled that antiferromagnetic topological charge, as well as Lorentz forces, acted on conduction electrons, can be coupled with Dzyaloshinskii‐Moriya interaction chirality for antiferromagnetic bimerons in 2D multiferroic materials. Such coupling guarantees the ferroelectric control of TSHE. Using first‐principles calculations and atomic spin model simulations, the validity of this mechanism is further demonstrated in multiferroic monolayer CuCr2Se4 with experimental feasibility. The alter‐chirality of the Dzyaloshinskii‐Moriya interaction is found to play a crucial role in realizing this mechanism. This results extend TSHE to be used in spintronics and open a new direction for spintronics research.

Spin Hall effect in doped ferroelectric HfO2

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Ferroelectricity in the Al doped HfO2

Engineering Topological Spin Hall Effect in 2D Multiferroic Material

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films

Ferroelectricity in HfO 2 from a Coordination Number Perspective

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO$_2$ from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Spin pumping and inverse spin Hall effect in iridium oxide

Vibrational fingerprints of ferroelectric HfO2

Ultrahigh oxygen ion mobility in ferroelectric hafnia

Spin‐Orbit Torque: Tuning Effective Spin Hall Angles Via Oxygen Vacancies in Multiferroic BiFeO 3 ‐based Heterostructures (adv. Electron. Mater. 10/2019)

Effect of Dopant Ordering on the Stability of Ferroelectric Hafnia

Tuning the Interfacial Spin-Orbit Coupling with Ferroelectricity

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

Coexistence of Large Conventional and Planar Spin Hall Effect with Long Spin Diffusion Length in a Low-Symmetry Semimetal at Room Temperature

Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

Spin Hall effect emerging from a chiral magnetic lattice without spin-orbit coupling