Abstract:In this article, the failure behavior and mechanism of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in the third quadrant under repetitive surge current stress are investigated. Repetitive stress tests with different surge current peak values I-peak are carried out. At high I-peak , as the stress cycle increases, the evolution of the peak value of surge voltage induced by surge current shows an obvious turning phenomenon and a significant increasing trend. When the surge voltage reaches a certain value, the gate-to-source breakdown occurs, and then, the device is burned out. We propose that the degradation of the third-quadrant conduction characteristics results in the change of surge voltage, and excessive electric field intensity induced by high gate-to-drain voltage V(GD )causes the gate Schottky junction breakdown. It is confirmed by further experiments, electrical performance characterization, and simulation. Inconsistent degradation of the two-dimensional electron gas (2DEG) channel in various regions causes the aforementioned turning phenomenon. As the stress cycle increases, the channel degradation in the gate-to-source/drain access region occupies a dominant position. In this situation, the V-GD increases continuously, which will enhance the tunneling effect at the Schottky junction, until breakdown occurs. Besides, the device shows better surge current reliability at higher gate-to-source voltage. These results provide important insights into the improvement of GaN HEMTs reliability.

Study on Abnormal Gate Structures of GaN HEMT Devices

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT

Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT

Recent Progress of Physical Failure Analysis of GaN HEMTs

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Physical Insight into the Abnormal VTH Instability of Schottky P-Gan HEMTs under High-Frequency Operation

Physical insight into the abnormal V TH instability of Schottky p -GaN HEMTs under high-frequency operation

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Optimization AlGaN/GaN HEMT with Field Plate Structures

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping