Abstract:Warpage in Insulated Gate Bipolar Transistor (IGBT) module is induced by the unavoidable mismatch of materials and asymmetric structure in almost every packaging process. The high level of warpage and thermal stress is introduced during reflow processes, which can impact the IGBT reliability. Pre-warping substrate method has been used as industry practice for reducing warpage due to reflow. The method still faces challenges of low cost and process simplification. With the development of copper bonding technique, IBP (Integrate base plate) was recently developed for reducing the warpage. However, the method is not cost-effective. In this paper, a low-cost and simple method of embedding DBC plates into copper substrate has been proposed as alternative solution for the warpage reduction. A 1200V IGBT module prototype was selected for benchmarking the warpage reduction methods. Finite element method with viscoplastic solder model and large deformation theory was used to investigate the solder reflow process. Anand constitutive model available in FEM tools for modeling the viscoplastic behaviors of solder materials was used for SAC305 solder layers. The whole reflow process was simulated by advanced element “death and activation” technique. Three package assembly methods for reducing warpage were investigated by advanced finite element analyses. The FEA result shows that the proposed new method can effectively reduce the warpage of IGBT module to industry-acceptable level.

Investigation of Deformation Fluctuation of IGBT Chips under Switching Conditions Using the Dynamic Field Reconstruction Method

Investigation of Thermal Deformation Characteristics in IGBT Modules Under Bonding Wire Cracking Condition.

Impacts of Switching Parameters on Thermal and Mechanical Characteristics in IGBT Modules

LF-OCT Based Non Destructive Testing for IGBT Module

A Novel Electric Field Stress Optimization Method for High-voltage IGBT Module Based on AC Dielectrophoresis

Direct Capture of Switching Mechanical Wave on IGBT Bare Dies

Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach

Optimization for Warpage and Residual Stress Due to Reflow Process in IGBT Modules Based on Pre-Warped Substrate

Simulation of crack propagation in solder layer of IGBT device under temperature shock by viscoplastic phase field method

Warping model of high-power IGBT modules subjected to reflow soldering process

In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

Study of Accelerated Power Cycling Test of IGBT Power Modules

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Diagnosing IGBT Module Degradation by Frequency-domain Heat Flow Analysis

Finite Element Modeling of IGBT Modules to Explore the Correlation Between Electric Parameters and Damage in Bond Wires

A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

A New Method for Reducing Warpage Due to Reflow in IGBT Module

Characterization of packaging warpage, residual stress and their effects on the mechanical reliability of IGBT power modules

Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions

A Thermal-Mechanical Deformation Based Fault Diagnosis Method Utilizing Support Vector Machine Algorithm for IGBT Bonding Wire Crack Detection.

A simulation of IGBT module under power cycling test condition