Abstract:The AMD UltraScale+ XCZU9EG device is a Multi-Processor System-on-Chip (MPSoC) with embedded Programmable Logic (PL) that excels in many Edge (e.g., automotive or avionics) and Cloud (e.g., data centres) terrestrial applications. However, it incorporates a large amount of SRAM cells, making the device vulnerable to Neutron-induced Single Event Upsets (NSEUs) or otherwise soft errors. Semiconductor vendors incorporate soft error mitigation mechanisms to recover memory upsets (i.e., faults) before they propagate to the application output and become an error. But how effective are the MPSoC's mitigation schemes? Can they effectively recover upsets in high altitude or large scale applications under different workloads? This article answers the above research questions through a solid study that entails accelerated neutron radiation testing and dependability analysis. We test the device on a broad range of workloads, like multi-threaded software used for pose estimation and weather prediction or a software/hardware (SW/HW) co-design image classification application running on the AMD Deep Learning Processing Unit (DPU). Assuming a one-node MPSoC system in New York City (NYC) at 40k feet, all tested software applications achieve a Mean Time To Failure (MTTF) greater than 148 months, which shows that upsets are effectively recovered in the processing system of the MPSoC. However, the SW/HW co-design (i.e., DPU) in the same one-node system at 40k feet has an MTTF = 4 months due to the high failure rate of its PL accelerator, which emphasises that some MPSoC workloads may require additional NSEU mitigation schemes. Nevertheless, we show that the MTTF of the DPU can increase to 87 months without any overhead if one disregards the failure rate of tolerable errors since they do not affect the correctness of the classification output.

System-on-chip Single Event Effect Hardening Design and Validation Using Proton Irradiation

Single-event-effect Propagation Investigation on Nanoscale System on Chip by Applying Heavy-Ion Microbeam and Event Tree Analysis

Primary Single Event Effect Studies on Xilinx 28-Nm System-on-Chip (Soc)

Single-event Effects Induced by Medium-Energy Protons in 28 Nm System-on-chip

Investigation of Single Event Effect in 28-Nm System-on-chip with Multi Patterns?

Single Event Effects Testing of Xilinx Zynq-7010 SoC with 239Pu Alpha Irradiation

Preliminary Single Event Effect Distribution Investigation on 28 Nm SoC Using Heavy Ion Microbeam

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

Single Event Effects Sensitivity of Low Energy Proton in Xilinx Zynq-7010 System-on Chip.

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip

Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation

Vulnerability evaluation on 16 nm FinFET Ultrascale plus MPSoC using fault injection and proton irradiation

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Neutron Irradiation Testing and Analysis of a Fault-Tolerant RISC-V System-on-Chip

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Overview of radiation hardening techniques for IC design

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Single Event Effects Assessment of UltraScale+ MPSoC Systems under Atmospheric Radiation

Single event upset sensitivity of medium-energy proton in Xilinx 16nm MPSoC

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology