Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

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Fully Integrated High-Voltage Level Shifts and Drivers for Buck Converters.

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

Design Of High Accuracy High Conversion Ratio Single-Stage Switching Power Converter For Modern Fpgas At 10mhz

A GaN-based MHz Active Clamp Flyback Converter with Adaptive Dual Edge Dead Time Modulation for AC-DC Adapters.

Design Techniques of Sub-ns Level Shifters With Ultrahigh dV/dt Immunity for Various Wide-Bandgap Applications

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity

A 20mhz 4A Gate Driver with 5.5 to 24V Output Drive Voltage for Wide Bandgap FETs.

A High-Speed Low Side GaN E-Hemt Driver with Gate Ringing and Overshoot Suppression.

A Sub-100mV Ultra-Low Voltage Level-Shifter Using Current Limiting Cross-Coupled Technique for Wide-Range Conversion to I/O Voltage

A Driving Pulse Edge Modulation Technique and Its Complex Programming Logic Devices Implementation.

A new level shifter with low power in multi-voltage system

A novel high-speed and low-power negative voltage level shifter for low voltage applications

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

A Synchronous Boot-strapping Technique with Increased On-time and Improved Efficiency for High-side Gate-drive Power Delivery