Abstract:The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nano-ribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunneling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.

Logic gates with a single graphene transistor

Complementary-Like Graphene Logic Gates Controlled by Electrostatic Doping

Enhanced architectures for room-temperature reversible logic gates in graphene

Electro-optical Logic Gates Based on Graphene–silicon Waveguides

Logic Operation and All-Optical Switch Characteristics of Graphene Surface Plasmons.

Reconfigurable Multi-Function Logic Based On Graphene P-N Junctions

Realization of graphene logics in an exciton-enhanced insulating phase

Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

Basic Logic Operations Achieved in a Single 2D WSe 2 Transistor by Surface-Charge-Transfer Doping

Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

Stable Universal 1‐ and 2‐Input Single‐Molecule Logic Gates (Adv. Mater. 26/2022)

Optical reversible logic gates based on graphene-silicon slot waveguides

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

Reconfigurable Graphene Logic Device Based on Tilted P-N Junctions

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

Stable Universal 1‐ and 2‐Input Single‐Molecule Logic Gates

Ambipolar Barristors for Reconfigurable Logic Circuits

Multifunctional Spin Logic Gates In Graphene Spin Circuits

Electronically Configurable Molecular-Based Logic Gates