Abstract:A novel low loss silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. It features a self-adapted parasitic thyristor ( ${T} ^{\ast}$ ), which is introduced owing to a P-drift region and an N carrier-stored (CS)-layer at the cathode side (PT LIGBT). In the ON-state, the ${T} ^{\ast} $ is easily triggered as the sum of current gains of parasitic transistor (P $\boldsymbol {+}$ anode/N-buffer/P-drift and N-buffer/P-drift/N-CS) equals to one, and then the PT LIGBT could enter the bipolar conduction state without the snapback effect. During the voltage rising period of turning off, the triggered ${T} ^{\ast} $ remains ON-state for some time and prevents from forming and expanding depletion region in the P-drift, because the anode voltage ( ${V}_{\text {A}}$ ) is sustained by the low hole density quasi-neutral P-drift region and remains a low value. During this period, the ON-state ${T} ^{\ast} $ prolongs the voltage rising time and extracts excess carriers at low ${V}_{\text {A}}$ value, which greatly reduces the current dropping time. Therefore, the turn-off loss ( ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ ) is obviously reduced. During short-circuit, the PT LIGBT introduces P-drift to create an additional high temperature point at the anode side, helping to optimize heat distribution and lengthens the short-circuit time. At the same ON-state voltage ( ${V}_{ \mathrm{\scriptscriptstyle ON}}$ ) and 300 K, the ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ of PT LIGBT is 65.6% and 50.2% lower than that of N-drift Con. LIGBT and LIGBT with CS layer (CS LIGBT), respectively. The PT LIGBT improves the short-circuit time by 12% compared with that of the CS LIGBT.

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Novel Integrated Double Pmos SOI-LIGBT with Low Loss and High Short-Circuit Capability

A Novel Low On-State Voltage SOI LIGBT with Enhanced Conductivity Modulation

A Novel Dual-Channel Soi Ligbt with Improved Reliability

A Novel Double-RESURF SOI-LIGBT with Improved $v_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation Current

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A Novel High Voltage SOI LIGBT with Split Gate and Carrier Stored Layer

A Novel Double-RESURF SOI Lateral TIGBT with Self-Biased Nmos for Improved V-CE(sat)-E-off Tradeoff Relationship

Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates

Simulation Study on a Novel Snapback-Free and Low Turn-off Loss Reverse-Conducting SOI-LIGBT with P-type Double Trench Gates on the Anode Region

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT with Enhanced Emitter Injection

Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT with a Self-Adapted Parasitic Thyristor

A Novel Self-Regulated Potential SOI LIGBT with Low ON-State Voltage and Turn-off Loss

A 800 V Dual Conduction Paths Segmented Anode LIGBT with Low Specific On-Resistance and Small Shift Voltage

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT with Embedded Diode and MOSFET

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A Novel No Miller Plateau SOI-LIGBT with Low Saturation Current and Improved Switching Performance

Simulation Study of a Novel Thin Layer SOI Carrier-Stored TLIGBT with Self-Biased Pmos

An Ultralow Loss Reverse-Conducting LIGBT with Embedded P-P-N Diode in Oxide Trench