Abstract:Recent years have witnessed the rising of halide perovskites for potential applications in photovoltaic and optoelectric devices. Due to the tilting motions of the octahedrons and rattling of the filling atoms, cubic halide perovskites show strong anharmonicity and imaginary frequencies in the phonon dispersion, which brings a great challenge to the prediction of carrier transports based on many-body theory. We have investigated the effect of quartic lattice anharmonicity on the carrier transports of cubic CsSnI3 and CsPbI3 in a comparative perspective by first-principles calculations. The hybrid functional of HSE06 was employed to get accurate band gaps and the self-consistent phonon method was used to renormalize interatomic force constants. Based on the electron-phonon Wannier interpolation and Boltzmann transport equation, the carrier mobilities and mode -resolved scattering rates were calculated and the dominant scattering channels were analyzed. Our results reveal that the mobility takes 595.9 and 84.5 cm2/Vs at room temperature for cubic CsSnI3 and CsPbI3, respectively, in good agreement with the experiment results. The longitudinal stretching mode of the Sn(Pb)-I bond with frequency of 120 cm-1 plays a dominant role in carrier scattering. In comparison, the acoustic modes and the rattling modes have a negligible effect on carrier scattering. Calculations of the band scattering rates show that deep valleys emerge at the band edges for both the highest valence band and the lowest conduction band, which is responsible for the slow relaxation of hot carriers. The strength of intraband electron-phonon coupling (EPC) between the band edge and the Sn(Pb)-I bond stretching mode is far larger than those of other modes, which leads to the dominant scattering in carrier transport. Compared with the harmonic approximation of atom interactions, the inclusion of quartic anharmonicity leads to the enhancement of atom interactions, which decreases the EPC strength and consequently increases the carrier mobilities.

Investigation of Carrier Transport Behavior for Cubic CH3NH3SnX3 and CH3NH3PbX3 (x=br and I) Using Boltzmann Transport Equation

Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

Effect of Quartic Anharmonicity on the Carrier Transport of Cubic Halide Perovskites CsSnI3 and CsPbI3

First-principles calculations of improving carrier mobility for β - CsPbI3

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

SYNTHESIS AND CONFORMATION OF A COPOLYMER OF E-CARBOBENZOXY-L-LYSINE AND S-CARBOBENZOXYL-L-CYSTEINE.

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Long-range charge carrier mobility in metal halide perovskite thin-films and single crystals via transient photo-conductivity

Optical Characterizations Of The Surface States In Hybrid Lead-Halide Perovskites

Effect of trap states, ion migration and interfaces on carrier transport in single crystal, polycrystalline and thick film devices of halide perovskites CH$_3$NH$_3$PbX$_3$ (X= I, Br, Cl)

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3

Lead iodide perovskite light-emitting field-effect transistor

Influence of halide composition on the structural, electronic, and optical properties of mixed CH$_3$NH$_3$Pb(I$_{1-x}$Br$_x$)$_3$ perovskites calculated using the virtual crystal approximation method

Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening

Theoretical Study on the Carrier Mobility and Optical Properties of CsPbI3 by DFT

Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors

Evolutions Of Optical Constants, Interband Electron Transitions, And Bandgap Of Sn-Doped Ch3nh3pbi3 Perovskite Films

First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

Charge transport in mixed metal halide perovskite semiconductors

First-principles Study of Carrier Mobility and Strain Effect in MX (M=Sn, Pb; X=P, As) Monolayers