Abstract:GaN-based wide bandgap semiconductors have become one of the most extensively studied materials and rapid progress has been demonstrated in both optical and electronic devices. Due to their wide bandgap, good thermal and chemical stability, GaN-based semiconductor materials are also very promising for high temperature pH sensor devices. The purpose of this project is to fabricate GaN based pH sensor and characterize the sensing characteristics with different pH values. This project is mainly concerned on fabricating the pH sensor using n- AlGaN/GaN HEMT with gateless FET structure. The sensor must have high performance for Intelligent Quantum (IQ) chip application in order to follow the circulation of epoch. IQ chip is required to develop a new device for Ubiquitous Network Society (UNS). It is a smart chip with nanometer scale quantum processors and memories are integrated on chip with capabilities of wireless communication, wireless power supply and various sensing functions. The discussion in this project report focuses on the device and material structure of fabricated sensor, the fabrication process, the measurement setup and the results of device characterization and measurement. Based on results obtained, the FET behavior was observed from the IDS vs. VDS of device fabricated. The potential of the AlGaN surface at the sensing area can be effectively controlled by the solution. Thus, good gate controllability was observed. Moreover, it was observed in that current collapse normally in AlGaN based FET device. From the experiment, the drain-source current decreases with the pH level as expected. Therefore, it can be concluded that the gateless AlGaN/GaN HEMTs shows significant change in current as exposure to different pH solutions.

Study of Mechanism and Testing Method for Ph Sensing Using Open-Gate AlGaN/GaN High Electron Mobility Transistors

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Ph Sensor Based on an AlGaN/GaN HEMT Structure

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

Applications of AlGaN/GaN High Electron Mobility Transistor-Based Sensors in Water Quality Monitoring

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure

AlGaN/GaN Open-Gate High Electron Mobility Transistors for Glucose Detection

Enhancing the Sensitivity of GaN High Electron-Mobility Transistors-Based Ph Sensor by Dual Function of Monolithic Integrated Planar Multi-Channel and Ultraviolet Light

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Detection of Halide Ions with AlGaN∕GaN High Electron Mobility Transistors

Ethanolamine Modified ZnO Nanorods-Based Disposable Gate-AlGaN/GaN High Electron Mobility Transistor for pH Sensing

Modeling and Experimental Study on Sensing Response of an Algan/Gan Hemt-Based Hydrogen Sensor

Enhancing the Sensitivity of the Reference Electrode Free AlGaN/GaN HEMT Based Ph Sensors by Controlling the Threshold Voltage

Planar Dual Gate GaN HEMT Cascode Amplifier As a Voltage Readout Ph Sensor with High and Tunable Sensitivities

Normally off AlGaN/GaN Ion-Sensitive Field Effect Transistors Realized by Photoelectrochemical Method for Ph Sensor Application

Influence of the Ratio of Gate Length to Source-Drain Distance on the Sensitivity of the AlGaN/GaN HEMT Based Chemical Sensors and Biosensors

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device