Abstract:Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

Overall Enhancement of Electrical Properties of Indium Oxide Thin-Film Transistors by Surface Doping

Carrier Modulation and Effective Passivation of Tin Oxide Thin-Film Transistors by Organic Surface Doping

Pursuing High‐Performance Organic Field‐Effect Transistors through Organic Salt Doping

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Enhanced performance in doped micro-nano porous organic thin-film transistors

Dopant/Semiconductor/Electret Trilayer Architecture for High‐Performance Organic Field‐Effect Transistors

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Efficient Electrical Doping of Organic Semiconductors Via an Orthogonal Liquid‐Liquid Contact

Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals

Improved Electrical Performance of Oxide Transistor Utilizing Gallium Doping Both in Channel and Dielectric Layers

Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors

Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors

Performance Enhancement of Solution-Processed InZnO Thin-Film Transistors by Al Doping and Surface Passivation

Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Doping: A Key Enabler for Organic Transistors

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.