Lead Free 0.9na1/2bi1/2tio3–0.1bazr0.2ti0.8o3 Thin Film with Large Piezoelectric Electrostrain

Hao Yang,Jinyan Zhao,Wei Ren,Zuo-Guang Ye,K. B. Vinayakumar,Rosana A. Dias,Rui M. R. Pinto,Jian Zhuang,Nan Zhang
DOI: https://doi.org/10.1063/5.0106934
IF: 4
2022-01-01
Applied Physics Letters
Abstract:A sodium bismuth titanate-based thin film is widely investigated lead-free piezoelectrics with potential applications for modern micro-devices such as PiezoMEMS. In this work, a 0.9Na1/2Bi1/2TiO3–0.1BaZr0.2Ti0.8O3 thin film was deposited on a Pt/Ti/SiO2/Si (001) substrate by the sol–gel spin coating method. The deposited piezoelectric film shows low dielectric loss and high remnant polarization. The measured ferroelectricity loop showed a coercive field of 110 kV/cm and a saturation polarization of 46.83 μC/cm2. The piezoelectric response of this thin film does not decrease from room temperature to around 100 °C. The fabricated piezoelectric device with bottom and top electrodes showed a large macro-scale strain value of ∼4% under the DC (30 V) and AC voltages (f = 800 kHz, Vpp = 10 V).
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