Abstract:To explore new lead-free piezoelectric materials that is both environmentally friendly and healthy to provide the possibility for material selection for microelectromechanical systems. Lead-free piezoelectric (1-x) (0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3)-xBi(Ni0.5Zr0.5)O3 thin films (abbreviated as BNT-BKT-xBNZ) (x=0.00, 0.01, 0.02, 0.03, 0.04) were prepared on Pt(111)/Ti/SiO2/Si substrates by a sol-gel method. Impacts of Bi(Ni0.5Zr0.5) O3 content on the microstructure, dielectric, ferroelectric, and piezoelectric properties were also investigated detailedly. It found that the Bi(Ni0.5Zr0.5)O3 composition had a great influence on the increase of relaxor and the decrease of the oxygen vacancies, which is influential to the promotion of thin-film properties. Thin-film of BNTBKT-0.02BNZ showed the optimum electrical properties with the polarization of 40.27 mu C/cm2, dielectric constants of 477 and effective inverse piezoelectric coefficient reach up to 125.9 p.m./V. Results revealed that the BNT-BKT thin films with 0.02 mol% Bi(Ni0.5Zr0.5)O3-doped are a kind of lead-free piezoelectric materials with superior manifestations with a great development prospect for applications.

Piezoelectric Enhancement and Vacancy Defect Reduction of Lead-Free Bi0.5Na0.5TiO3-based Thin Films