Twist Angle Dependent Electronic Properties in 2D Graphene/mos2 Vdw Heterostructures

Jicui Wang,Mei Ge,Rongrong Ma,Yun Sun,Liyuan Cheng,Rui Wang,Miaomiao Guo,Junfeng Zhang
DOI: https://doi.org/10.1063/5.0077669
IF: 2.877
2022-01-01
Journal of Applied Physics
Abstract:Two-dimensional (2D) heterostructures constructed by different 2D materials offer new opportunities for novel nano-devices. Twist angle (θ) between two individual layers in 2D van der Waals (vdW) heterostructures shows great importance in modulating their electronic properties. Here, we performed first-principles calculations to study the thermodynamic stability and electronic properties of graphene/MoS2 (Gr/MoS2) vdW heterostructures. We have built dozens of possible Gr/MoS2 vdW heterostructures under the limitation of the maximum mismatch (δ ≤ 2.5%) and supercell lattice (≤20 Å). We found the cohesive energy (Ecoh) is dependent on the interlayer distance and θ. In addition, a huge difference can be found in both the band offset and interlayer carrier's lifetime of Gr/MoS2 with different θ. These results provide valuable insights into the identification of these twist structures in experiments and the designation of Gr/MoS2 related optoelectronic devices.
What problem does this paper attempt to address?