Abstract:It remains unknown to what extent the interlayer twist between two semiconductor monolayers affects their minority carrier lifetimes, diffusion lengths, and light absorbance properties. This work sheds light on this fundamental question. It explores the effects of various twist angles between vertically stacked p‐n‐like MoS2/WS2 heterobilayers on their fundamental optical properties. Atomically thin two‐dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for photovoltaic (PV) applications. Their self‐terminated nature and strong absorption characteristics introduce an unprecedented possibility for high voltages to bandgap ratios, with secondary benefits including the potential for high internal quantum efficiencies/low recombination and strong absorption coefficients coupled with stability in a range of environments. However, despite the promise of such material systems, their PV performances still lag behind the conventional 3D materials. In principle, one possible way to manipulate the behavior of a 2D heterobilayer structure is to change its interlayer twist angle. In this study, the effects of twist angle between vertically stacked type‐II MoS2/WS2 heterobilayers on fundamental optical properties such as light absorbance, excess carrier lifetime, and diffusion are reported. These properties can have a direct effect on the final PV performance of these heterobilayers. It is found that the interlayer twist in MoS2/WS2 heterobilayers does not affect their absorbance. However, the carrier lifetime and photon emission across the heterobilayers are modulated with the interlayer twist. These findings could be useful to facilitate the optimization of monolayer TMD‐based optoelectronic devices.

Effect of Interlayer Twisting Angle on Electronic and Optical Properties of Graphene/MoS2 Heterostructure

Unveiling the Magic of Twist Angle: Thermal transport in Two-dimensional Graphene/MoS2/Graphene Heterostructures

Unveiling the Magic of Twist Angle: Thermal transport in Two-dimensional Graphene/MoS 2 /Graphene Heterostructures

Tuning the Electronic Structure of Monolayer Graphene/mos2van Der Waals Heterostructures Via Interlayer Twist

Twist Angle-Dependent Conductivities Across MoS2/graphene Heterojunctions

Optical Parameters of Graphene/mos2 Van Der Waals Heterostructure Investigated by Spectroscopic Ellipsometry

Commensurate and Incommensurate Double Moiré Interference in Twisted Trilayer Graphene

Electronic Structure of 30∘ Twisted Double Bilayer Graphene

Twist-Angle-Dependent Ultrafast Charge Transfer in MoS2-Graphene Van Der Waals Heterostructures.

Demystifying the Modulation Effects of the Graphene Transport Layers on the Interlayer Charge Transfer Mechanism and Broadband Optical Properties of MoS2/graphene/WSe2 Van Der Waals Heterojunctions

Tunable Interband Transitions in Twisted H-Bn/graphene Heterostructures

Tunable Interband Transitions in Twisted Heterostructures

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Lattice Relaxation and Substrate Effects of Graphene Moiré Superlattice

Angle-Dependent Oscillatory Interlayer Coupling in Twisted MoS 2 /TaSe 2 Heterostructure

One-Interlayer-Twisted Multilayer MoS<sub>2</sub> Moire Superlattices

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Interlayer friction and superlubricity in bilayer graphene and MoS2/MoSe2 van der Waals heterostructures

One‐Interlayer‐Twisted Multilayer MoS 2 Moiré Superlattices

Twist Angle Effects on the Absorbance, Carrier Lifetime, and Diffusion Properties in Low Dimension Type‐II MoS2/WS2 Heterobilayers

Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN(0001) mixed-dimensional van der Waals heterostructure