High-Voltage 1064 Nm InGaAsP Multijunction Laser Power Converters

Jiajing Yin,Yurun Sun,Ancheng Wang,Shuzhen Yu,Junsheng Wang,Qiuxue Fu,Jie Qin,Yanhui Han,Wei Zhang,Shuming Zhang,Cong Xue,Jianrong Dong

DOI: https://doi.org/10.1109/led.2022.3183833

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:1064 nm six-junction laser power converters (LPCs) with InGaAsP absorption layers are designed and fabricated. I-V characteristics of the LPCs with an aperture of 8.32 mm2 are investigated as a function of laser power and temperature. Both the open-circuit voltage ( $\text{V}_{oc}$ ) and conversion efficiency ( $\eta $ ) improve with increasing laser power, and reach 4.694 V and 41.2 ± 2%, respectively, under the 1064 nm laser illumination of 1.676 W. The conversion efficiency decreases with the temperature at a rate of −0.09%abs/K independent of laser power. The temperature coefficient of the open-circuit voltage is determined to be −9.77 mV/K at a laser power of 0.174 W and decreases slightly with incident power. This piece of work extends the spectral range for laser power transmission and demonstrates the possibility of even higher voltage 1064 nm LPCs.