High–Power 792 nm Fiber–Coupled Semiconductor Laser

Peng Liu,Wanggen Sun,Xiao Sun,Zhen Zhu,Huabing Qin,Jian Su,Chengcheng Liu,Wenjing Tang,Kai Jiang,Wei Xia,Xiangang Xu
DOI: https://doi.org/10.3390/photonics10060619
IF: 2.536
2023-05-27
Photonics
Abstract:The pumping of Tm-doped crystal or fiber by a 792 nm semiconductor laser is an important way to generate a mid-infrared laser, which is widely used in various fields. In this paper, a high–power 792 nm fiber–coupled semiconductor laser module was successfully fabricated with the output power of 232 W at a 10 A continuous current and the electro-optic conversion efficiency of 48.6%. The laser module is coupled with 24 chips into a fiber by spatial multiplexing and polarization combination technology. For a single emitting laser chip, the continuous wave (CW) output power and threshold current are 10.45 W at 10 A and 1.55 A, respectively. A polarization as high as 94% can also be realized, which is more suitable for laser spatial beam combining. The laser module was aged for more than 4000 h at 12 A and 25 °C without obvious power degradation.
optics
What problem does this paper attempt to address?