Abstract:In view of recent experimental results, enhanced thermoelectric performance can be achieved in PbTe via dual doping at both cationic and anionic sites. However, little information is available for a deep understanding of how the various dual dopants tune the electronic structures of PbTe. In this work, the lattice geometry and band structures of (M, N) (M={K, Ag, Ge, Sn, Sb, Bi}, N={S, Se, I}) dually doped pairs are systematically clarified using first-principles calculations. The results indicate that the dual-dopant pairs tend to cluster in PbTe and impose a remarkable effect on the band structures near the band gap by the splitting of bands. The alkali K re-enlarges the nearly closed band gap in S- or Se-doped PbTe, while Ag introduces additional bands near the Fermi level in both solely and dually doped configurations. Unexpectedly, (Ag, S), (Ge, Se), (Sn, S) and (Sn, Se) co-doping produce camel’s-back-like structures with multiple extrema due to abnormal bending of bands near the band gap, which are anticipated to enhance the power factor of PbTe. Similarly, the Sb- and Bi-induced bands are also bent on the bottom of the conduction band. The band gaps in (Sb, S), (Sb, Se) and (Bi, N) are closed to drive the system towards metallicity. However, a re-opened band gap is obtained in the SbI-3 doping configuration. Supplementary calculations on larger supercells for the Ag–S doping configuration indicate that the single (Ag, S) dual-dopant pair behaves in a similar way to that in the small supercells with lower local atomic relaxation, weak band splitting and reduced band gap. The formation of dual-dopant nanoclusters can widen the band gap due to the introduction of large local strain in the vicinity of clusters. The impurity cluster size exerts a prominent effect on the band-edge states of PbTe. Our calculations reveal that it is possible to intentionally modulate the band structures of PbTe by appropriate collocation of dual-doping atoms for improved thermoelectric properties.

Electronic Structures and Thermoelectric Properties of (ag, Te), (sn, Te) and (sb, Te) Dually Doped PbSe on Cationic and Anionic Sites

First-principles Investigation of Dual Substitutional Impurity-Induced Electronic Structural Modulation of PbTe on Cationic and Anionic Sites

Enhanced Thermoelectric Performance of PbSe Co-Doped with Ag and Sb

High Thermoelectric Performance of Ge1−xPbxSe0.5Te0.5 Due to (pb, Se) Co-Doping

Modulated Fermi Level and Relaxed Lattice Strain Leading to Enhanced Thermoelectric Properties in AgSbSe 2

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Ag, Pb co-doped SnSe high performance thermoelectric materials

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Boosting the Thermoelectric Performance of PbSe from the Band Convergence Driven By Spin‐Orbit Coupling

Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

High Thermoelectric Properties for Sn-doped AgSbSe 2

Enhancing Thermoelectric Performance of p-Type PbSe through Suppressing Electronic Thermal Transports

Heavy Doping and Band Engineering by Potassium to Improve the Thermoelectric Figure of Merit in P-Type Pbte, Pbse, and Pbte1-Ysey

Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4

Tuning Ag content to achieve high thermoelectric properties of Bi-doped p-type Cu3SbSe4-based materials

Boosting Thermoelectric Performance of PbBi2Te4 Via Reduced Carrier Scattering and Intensified Phonon Scattering.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectric Transport Characteristics of N-Type (Pbte)1-X-y(pbs)x(sb2se3)y Systems Via Stepwise Addition of Dual Components

Achieving high power factor and thermoelectric performance through dual substitution of Zn and Se in tetrahedrites Cu<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub>

Synthesis and Thermoelectric Properties of Ag-Doped Snse