Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS with Different Die Attach Materials under 300°C Power Cycle Stress
Zheng Hu,Yidan Tang,Yamin Zhang,Runhua Gao,Xuan Li,Yun Bai,Xiaoli Tian,Jilong Hao,Chengyue Yang,Xinhua Wang,Xinyu Liu
DOI: https://doi.org/10.1109/jestpe.2024.3380026
IF: 5.462
2024-01-01
IEEE Journal of Emerging and Selected Topics in Power Electronics
Abstract:In this paper, new electrothermal characteristics degradation and failure mechanism of Silicon carbide junction barrier Schottky (SiC JBS) devices with different die attach materials under 300°C power cycle stress were investigated and found based on thermal structure function and failure analysis. The results showed that the electrothermal characteristics (thermal resistance, Rth j-d and on-resistance, Ron) were consistent, which were different in that decreased firstly and then increased for nanosilver, but increased overall for alloy solders under 300°C PC, both strongly related to evolution of porosity, secondphase, interface cracks, grain size in the die attach layer. However, the electrothermal characteristics were affected by dieattach evolution to varying degrees due to different diffusion mechanisms, causing different failure phenomena (50, 1200 and 4000 failure cycles for high-lead, Au-Ge solder and nanosilver respectively). Meanwhile, the reverse leakage current (IR) and breakdown voltage (VR) variations mainly depended on chip interface states, including the Schottky barrier lowering effect (induced by AlW IMC and large cracks generated at the Schottky contact metal layer/chip interface) and electrons and holes trapped at the SiO2/4H-SiC interface in the termination zone. Finally, this article discussed three failure mechanisms observed in devices employing three die attach materials under 300°C PC.
engineering, electrical & electronic