Effect of Reduction Degree of Graphene Oxide on Electrical Property of ERGO-Cu Bishell Interconnect Structure

Yuan Tian,Yunwen Wu,Tao Hang,Ming Li

DOI: https://doi.org/10.1109/icept56209.2022.9873109

2022-01-01

Abstract:From the Damascene process to chip packaging, copper (Cu) is the primary interconnect material. However, with the integration of chips and the frequency of signals increasing, copper interconnect is confronted with resistivity and reliability issues. Covering few layers graphene on copper (Gr-Cu Bishell structure) can improve interconnects performance effectively due to the extraordinary thermal and electrical property of graphene. The commonly used CVD deposition method for graphene requires high temperature, which limit the direct deposition of graphene on Cu interconnect. Electrophoretic deposition can realize direct graphene oxide (GO) deposition on Cu at room temperature. Unfortunately, the oxidative state of GO shows poor conductivity compared to the reduced state. Here, we employ an electro-reduction method to reduce to the electrophoretic deposited GO (named ERGO). The reduction of -OH and -C-O occur at -0.21 V and -0.72 V respectively. The reduction of -CO will cause sp 3 hybridization which lead to the crystal disordering, indicating increased electron scattering. By adjusting the reduction conditions, the square resistance of ERGO-Cu structure can be reduced by 4.9%.