Abstract:Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion implantation was performed into a 10 μ m thick Si-doped GaN drift layer grown on a free-standing n-type GaN substrate. We fabricated the JBS diodes with different n-type GaN channel widths L n = 1 and 1.5 μ m. The JBS diodes, depending on L n , exhibited on-resistance ( R ON ) between 0.57 and 0.67 mΩ cm 2 , which is a record low value for vertical GaN Schottky barrier diodes (SBDs) and high breakdown (BV) between 660 and 675 V (84.4% of the ideal parallel plane BV). The obtained low R ON of JBS diodes can be well explained in terms of the R ON model, which includes n-type GaN channel resistance, spreading current effect, and substrate resistance. The reverse leakage current in JBS diodes was relatively low 10 3 –10 4 times lower than in GaN SBDs. In addition, the JBS diode with lower L n exhibited the leakage current significantly smaller (up to reverse bias 300 V) than in the JBS diode with large L n , which was explained in terms of the reduced electric field near the Schottky interface. Furthermore, the JBS diodes showed a very high current density of 5.5 kA/cm 2 , a low turn-on voltage of 0.74 V, and no destruction against the rapid increase in the reverse current approximately by two orders of magnitude. This work demonstrated that GaN JBS diodes can be strong candidates for low loss power switching applications.

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