Abstract:A single‐crystal α‐Sb2O3 dielectric is synthesized by employing one‐step chemical vapor deposition method. Dual‐gate MoS2 field‐effect transistors are fabricated using α‐Sb2O3, achieving a switching ratio exceeding 108. Effective modulation of field‐effect transistors using 2D metal oxides is successfully demonstrated. These findings provide a vital strategy for the optimization and integration of transistors. The remarkable potential of two‐dimensional (2D) materials in sustaining Moore's law has sparked a research frenzy. Extensive efforts have been made in the research of utilizing 2D semiconductors as channel materials in field‐effect transistors. However, the next generation of integrated devices requires the integration of gate dielectrics with wider bandgaps and higher dielectric constants. Here, insulating α‐Sb2O3 single‐crystal nanosheets are synthesized by one‐step chemical vapor deposition method. Importantly, the α‐Sb2O3 single‐crystal dielectric exhibits a high dielectric constant of 11.8 and a wide bandgap of 3.78 eV. Besides, the atomically smooth interface between α‐Sb2O3 and MoS2 enables the fabrication of dual‐gated field‐effect transistors with the top gate dielectric of α‐Sb2O3 nanosheets. The field‐effect transistors exhibit a switching ratio of exceeding 108, which achieves the manipulation of field‐effect transistors by using 2D dielectric materials. These results hold significant implications for optimizing the performances of 2D devices and innovating microelectronics.

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