Two-Dimensional VDW Crystal SnP3 with High Carrier Mobility and Extraordinary Sunlight Absorbance

Chen Wang,Ting Hu,Erjun Kan
DOI: https://doi.org/10.1063/1674-0068/cjcp1809212
2019-01-01
Abstract:Although bulk SnP3 has been fabricated by experiments in the 1970's, its electronic and optical properties within several layers have not been reported. Here, based on first-principles calculations, we have predicted two-dimensional SnP3 layers as new semiconducting materials that possess indirect band gaps of 0.71 eV (monolayer) and 1.03 eV (bilayer), which are different from the metallic character of bulk structure. Remarkably, 2D SnP3 possesses high hole mobility of 9.171x10(4) cm(2).V.s(-1) and high light absorption (similar to 10(6) cm) in the whole visible spectrum, which predicts 2D SnP3 layers as prospective candidates for nanoelectronics and photovoltaics. Interestingly, we found that 2D SnP3 bilayer shows similar electronic and optical characters of silicon.
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