Suction diathermy as an adjunct to endoscopic removal of inverted papilloma

O. Hughes,C. Skilbeck,I. Kwame,Kelvin Kwa,D. Choa

DOI: https://doi.org/10.1002/lary.21436

IF: 2.97

2011-05-01

The Laryngoscope

Abstract:No Obstract.

What problem does this paper attempt to address?

Phosphorene: A New 2D Material with High Carrier Mobility

Han Liu,Adam T. Neal,Zhen Zhu,David Tomanek,Peide D. Ye

DOI: https://doi.org/10.1021/nn501226z

2014-01-17

Abstract:Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.

Mesoscale and Nanoscale Physics,Materials Science
A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Ning Lu,Zhiwen Zhuo,Hongyan Guo,Ping Wu,Wei Fa,Xiaojun Wu,Xiao Cheng Zeng

DOI: https://doi.org/10.1021/acs.jpclett.8b00595

2018-03-01

Abstract:Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications.

Materials Science
Two-dimensional monolayer B2P6 with anisotropic elastic properties and carrier mobility

Hui Zhang,Zi-Hao Yue,Fan-Shun Meng

DOI: https://doi.org/10.1016/j.vacuum.2021.110651

IF: 4

2022-01-01

Vacuum

Abstract:A novel two-dimensional (2D) monolayer B2P6 allotrope is proposed by the first-principles calculations. The monolayer B2P6 is demonstrated as stable by the combination of cohesive energy, phonon dispersion and elastic constants. Moreover, monolayer B2P6 has anisotropic Young's modulus and negative Poisson ratio. The carrier mobility is also anisotropic and can reach thousands of cm2V−1s−1, which is close to that of monolayer black phosphorene. Furthermore, monolayer B2P6 has a direct band gap of 0.71eV (HES06) and effective optical absorption over both infrared and visible light range. The combined direct band gap, ultrahigh mobility and optical properties render monolayer B2P6 a broad application prospect in the field of nano-electronic devices and thin-film solar cells. Finally, calculations for OH adsorption show the possible synthesis of monolayer B2P6 in water environment and also potential applications such as electrocatalytic hydrogen production.

materials science, multidisciplinary,physics, applied
Carbon Phosphide Monolayer with Superior Carrier Mobility

Gaoxue Wang,Ravindra Pandey,Shashi P. Karna

DOI: https://doi.org/10.1039/c6nr00498a

2016-01-30

Abstract:Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as {\alpha}-CP and \b{eta}-CP with puckered and buckled surfaces, respectively are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The {\gamma}-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest the binary CP monolayer to be yet unexplored 2D materials holding great promises for applications in high-performance electronics and optoelectronics.

Materials Science
Hydrogenated PtP2 Monolayer: Theoretical Predictions on the Structure and Charge Carrier Mobility

Chunying Pu,Jiahui Yu,Rongmei Yu,Xin Tang,Dawei Zhou

DOI: https://doi.org/10.1039/c9tc03479j

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Two-dimensional semiconducting materials have attracted intensive attention due to their superior transport and optical properties and their potential applications in future nanoscale devices. However, the number of wide band gap two-dimensional (2D) materials is still limited in all known 2D materials. In this study, by means of the particle-swarm optimization method and density functional theory calculations, we predicted a new wide gap 2D anisotropic material, a hydrogenated PtP2 monolayer (PtP2H2). The structure is found to be stable thermally, dynamically, and mechanically and exhibits an anisotropic mechanical behavior with respect to the Young's modulus and Possion's ratio. Using the hybrid functional of Heyd-Scuseria-Ernzerhof (HSE06) calculations to calculate the band structure of PtP2H2 indicate that the structure is a wide gap semiconductor with an indirect band gap of 3.34 eV. According to the deformation potential theory, the HSE calculations for the carrier mobility reveal that PtP2H2 has higher carrier mobilities along the b direction (2.38 x 10(3) for electrons and 2.26 x 10(3) cm(2) V-1 s(-1) for holes, respectively) than those along the a direction (1.74 x 10(3) for electrons and 1.06 x 10(3) cm(2) V-1 s(-1) for holes, respectively), and it shows anisotropy in-plane. Furthermore, PtP2H2 exhibits strong optical absorption in the ultraviolet region. Our calculations suggest that PtP2H2 has potential applications in optoelectronics owing to its wide band gap and high carrier mobility.
The Phosphorene Under The External Electronic Field And Strain

Tao Wang,Yan Liu,Wen Wen,Wei Guo,You Yin

DOI: https://doi.org/10.1142/S0129183117501315

2017-01-01

International Journal of Modern Physics C

Abstract:Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate

Jiafeng Xie,Z. Y. Zhang,D. Z. Yang,M. S. Si,D. S. Xue,Xiaohui Deng

DOI: https://doi.org/10.48550/arXiv.1610.03185

2016-10-11

Materials Science

Abstract:Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applications in more effective electronic devices and enrichment of more unusual phenomena. For instance, introducing a flat hexagonal boron nitride (h-BN) substrate to enhance the carrier mobility has been achieved experimentally. However, the underlying mechanics is not well understood. In this study, we estimate the carrier mobility of phosphorene on h-BN substrate (P/h-BN) within the framework of the phonon-limited scattering model at first-principles level. %Our results are generic. Besides high-$\kappa$ dielectric property, h-BN also possesses excellent mechanical property of a high two-dimensional elastic modulus. The P/h-BN heterostructure inherits the high elastic modulus of h-BN, leading to an enhanced carrier mobility in phosphorene. Owing to the weak van der Waals interactions between the layers, the unique electronic properties of phosphorene are almost perfectly preserved near the Fermi level, guaranteeing the superior electronic transport in P/h-BN. Our findings offer a new perspective to improve the carrier mobility in phosphorene as well as other 2D materials based field effect transistors.
Penta-Pt2N4: an Ideal Two-Dimensional Material for Nanoelectronics.

Zhao Liu,Haidi Wang,Jiuyu Sun,Rujie Sun,Z. F. Wang,Jinlong Yang

DOI: https://doi.org/10.1039/c8nr05561k

2018-01-01

Abstract:Since the discovery of graphene, two-dimensional (2D) materials have paved a new routine for designing high-performance nanoelectronic devices. To facilitate the device applications, there are three key requirements for a material: sizeable band gap, high carrier mobility and robust environmental stability. However, for the hottest 2D materials studied in recent years, graphene is gapless, transition metal dichalcogenides have low carrier mobility, and black phosphorene is environmentally sensitive. So far, these three characteristics can seldom be satisfied in one single material. Therefore, it becomes a great challenge for finding an ideal 2D material to overcome such a limitation. In this work, we theoretically predict a novel planar 2D material: Penta-Pt2N4, which are designed by the fantastic Cario pentagonal tiling as well as the rare nitrogen double bond. Most significantly, the 2D Penta-Pt2N4 exhibits excellent intrinsic properties, including large direct band gap up to 1.51 eV, high carrier mobility up to 105 cm2V-1s-1, giant Young's module up to 0.70 TPa, and robust dynamic, thermal and chemical stability. Moreover, Penta-Pt2N4 is a global minimal with PtN2 stoichiometry in 2D, so we also propose a CVD/MBE scheme to enable its experimental synthesis. We envision that the 2D Penta-Pt2N4 may find a wide application for future nanoelectronics.
ψ-Phosphorene: a new allotrope of phosphorene.

Haidi Wang,Xingxing Li,Zhao Liu,Jinlong Yang

DOI: https://doi.org/10.1039/c6cp07944j

IF: 3.3

2017-01-01

Physical Chemistry Chemical Physics

Abstract:Based on the crystal structure prediction, we propose a new allotrope of phosphorene, psi-phosphorene (psi-P), with a porous structure, which is both thermally and dynamically stable in comparison with the previously reported allotropes. Due to its unique atom configuration, psi-P has highly orientation-dependent mechanical properties and excellent flexibility. Calculations using the HSE functional predict that psi-P is semiconducting with an indirect band gap of 1.57 eV and possesses anisotropic transport properties. Particularly, the electron mobility along the x-direction is up to 1.3 x 10(4) cm(2) V-1 s(-1), which is comparable with that of black phosphorene. Considering its intrinsic porous structure, the performance of monolayer psi-P as a gas purification membrane was investigated. The calculation demonstrates that psi-P could be used for hydrogen purification from the mixture of CH4, CO2, N-2, CO, and H-2 with high selectivity. Furthermore, combining a suitable band gap with high carrier mobility, a MoSe2/psi-P van der Waals heterojunction is predicted to be a good solar cell material, whose power conversion efficiency is estimated up to 20.26%. Finally, we demonstrated that the Au(110) surface could be a suitable substrate for the synthesis of psi-P.
Highly Promoted Carrier Mobility and Intrinsic Stability by Rolling Up Monolayer Black Phosphorus into Nanoscrolls.

Yitian Wang,Chenghuan Jiang,Qian Chen,Qionghua Zhou,Haowei Wang,Jianguo Wan,Liang Ma,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpclett.8b02913

2018-01-01

Abstract:Rolling up two-dimensional (2D) materials into nanoscrolls could not only retain the excellent properties of their 2D hosts but also display intriguing physical and chemical properties that arise from their 1D tubular structures. Here, we report a new class of black phosphorus nanoscrolls (bPNSs), which are stable at room-temperature and energetically more favorable than 2D bP. Most strikingly, these bPNSs hold tunable direct band gaps and extremely high mobilities (e.g., the mobility of the double-layer bPNS is about 20-fold higher than that of 2D bP monolayer). Their unique self-encapsulation structure and layer-dependent conduction band minimum can largely prevent the entrance of O-2 and the production of O-2 and thereby suppress the possible environmental degradation as well. The enhanced intrinsic stability and promoted electronic properties render bPNSs great promise in many advanced electronics or optoelectronics applications.
GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement

Yu Jing,Yandong Ma,Yafei Li,Thomas Heine

DOI: https://doi.org/10.1021/acs.nanolett.6b05143

2017-01-31

Abstract:We propose a two-dimensional crystal which possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene: GeP3. GeP3 has a stable three-dimensional layered bulk counterpart which is metallic and is known from experiment since 1970. It has a small cleavage energy, which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. The material shows strong interlayer quantum confinement effects, resulting in a band gap reduction from mono- to bilayer, and then to a semiconductor-metal transition between bi- and triple layer. Under biaxial strain, the indirect band gap can be turned into a direct one. Pronounced light absorption in the spectral range from ~600 to 1400 nm is predicted for monolayer and bilayer and promises applications in photovoltaics.

Materials Science
Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Pei Zhao,Jianwei Li,Wei Wei,Qilong Sun,Hao Jin,Baibiao Huang,Ying Dai

DOI: https://doi.org/10.1039/c7cp05201d

IF: 3.3

2017-01-01

Physical Chemistry Chemical Physics

Abstract:Searching for novel two-dimensional (2D) materials with desirable properties is of great significance for the design of next generation nano-devices. In this work, we address the electronic and optoelectronic properties of monolayer AsSb on the basis of density functional theory (DFT) combined with quantum transport simulations. We find three stable phases of monolayer AsSb, that is, the alpha , gamma and epsilon phases, and all of them show direct bandgaps, which are beneficial in increasing the transition probability of photon-generated electrons and improving the efficiency of photoelectric conversion. In addition, these systems could attain meaningful strain-induced band engineering and a phase transition from semiconductor to metal occurs. It is highly interesting that the monolayer AsSb has an ultrahigh carrier mobility (similar to 10(4) cm(2) V(-1 )s(-1)), which is evidently larger than most of the reported 2D materials. In light of the non-equilibrium Green's function formalism, a linear photogalvanic effect (PGE) is observed along both the zigzag and armchair directions, suggesting that monolayer AsSb exhibits excellent photoresponse in a broad spectrum ranging from ultraviolet to infrared light, which is favorable for serving as a potential outstanding photovoltaic material. Our results highlight that these monolayer AsSb are promising candidates for future applications in electronics and optoelectronics.
Ultrahigh carrier mobility and light-harvesting performance of 2D penta-PdX2 monolayer

Dhara Raval,Bindiya Babariya,Sanjeev K. Gupta,P. N. Gajjar,Rajeev Ahuja

DOI: https://doi.org/10.1007/s10853-020-05501-w

IF: 4.5

2020-11-10

Journal of Materials Science

Abstract:In this study, we have examined the geometrical, electronic and optical properties of penta-PdX2 (X = As,P) using density functional calculation. The electronic structure calculations show that the penta-PdAs2 and PdP2 are semiconductors with direct band gaps of 0.34 eV and 0.30 eV, respectively. The dynamical stability of penta-PdX2 monolayer is proved by the absence of imaginary frequencies in the phonon dispersion curve. By applying a biaxial strain (for PdAs2: − 6% to + 6% and for PdP2: − 5.5% to + 5.5%) on the monolayer, the effective mass and band edges are tuned effectively. Remarkably, the range of penta-PdX2 carrier mobility was obtained in an extremely high order of 105 cm2 V−1 s−1 for holes and 104 cm2 V−1 s−1 for electrons. The optical properties of penta-PdX2 were also strained-tunable and exhibit outstanding absorption of infrared, visible and ultraviolet light. More importantly, the band edges alignment has tunable with implemented external electric field (V/Å) along the z-direction. Our work would stimulate the fabrication of penta-PdX2 monolayer, and it is envisioned that it is an appropriate future candidate for optoelectronic and ultra-fast electronic applications.

materials science, multidisciplinary
A New Phosphorus Allotrope with Direct Band Gap and High Mobility

W. H. Han,Sunghyun Kim,In-Ho Lee,K. J. Chang

DOI: https://doi.org/10.48550/arXiv.1705.05073

2017-05-15

Materials Science

Abstract:Based on ab initio evolutionary crystal structure search computation, we report a new phase of phosphorus called green phosphorus ({\lambda}-P), which exhibits the direct band gaps ranging from 0.7 to 2.4 eV and the strong anisotropy in optical and transport properties. Free energy calculations show that a single-layer form, termed green phosphorene, is energetically more stable than blue phosphorene and a phase transition from black to green phosphorene can occur at temperatures above 87 K. Due to its buckled structure, green phosphorene can be synthesized on corrugated metal surfaces rather than clean surfaces.
Electronic Structure and Optical Characteristic for Pd3P2S8 Layers

Yun Shan,Tinghui Li,Lizhe Liu

DOI: https://doi.org/10.1016/j.ssc.2019.113786

IF: 1.934

2019-01-01

Solid State Communications

Abstract:Ternary palladium thiophosphate (Pd3P2S8), a new member of layered compound with interlocked layered structure, has attracted much attention due to its intriguing physical and chemical properties. However, its electronic structure and optical characteristic have not been discussed so far. Different from other two-dimensional materials, our calculated results indicate that the bandgap decreases to 2.55 eV (bulk) from 2.94 eV (monolayer) due to interlayer coupling, and the band structure of monolayer is independent of imposed external strain. In particular, its intrinsic electronic structure cannot be affected by the oxidation process, in which the monolayer displays a stable semiconducting feature. These novel physical properties provide a new insight into designing new-type photovoltaic devices.
Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Yongqing Cai,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1038/srep06677

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV) and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.
Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Hongyan Guo,Ning Lu,Jun Dai,Xiaojun Wu,Xiao Cheng Zeng

DOI: https://doi.org/10.1021/jp505257g

2014-06-17

The Journal of Physical Chemistry C

Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

Y. C. Huang,X. Chen,C. Wang,L. Peng,Q. Qian,S. F. Wang

DOI: https://doi.org/10.1039/c7nr01952a

IF: 6.7

2017-01-01

Nanoscale

Abstract:Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.
SnxPy Monolayers: a New Type of Two-Dimensional Materials with High Stability, Carrier Mobility, and Magnetic Properties

Yan-Mei Dou,Chang-Wen Zhang,Ping Li,Pei-Ji Wang

DOI: https://doi.org/10.1186/s11671-020-03383-0

2020-07-29

Nanoscale Research Letters

Abstract:Abstract Searching for two-dimensional (2D) group V materials with ferromagnetism, elastic anisotropy, and carrier mobility and tunable band structure is one key to developing constantly developing nanodevices. The 2D monolayers Sn x P y with x / y (1/1, 1/2, 1/3, and so on) coordination number are studied based on the particle-swarm optimization technique combined with the density functional theory optimization. Its thermal stability can be confirmed by molecular dynamics at 70K and 300K, indicating that the novel 2D materials have a stable existence. The electronic band structures of four stable structures suggest that all the monolayers of Sn x P y are fully adjustable and flexible tunable band gaps semiconductors under the biaxial strain. The monolayer of P $$ \overline{4}{2}_1 $$ 4 ̄ 2 1 m-SnP 2 with unique valence band structure can go from nonmagnetic to ferromagnetic by the hole doping because of the “Stoner criterion,” and Pmc2 1 -SnP 2 is a direct-like gap semiconductor with in-plane elastic anisotropy to possess a high electron mobility as high as 800 cm 2 V −1 s −1 along the k b direction, which is much higher than that of MoS 2 (∼ 200 cm 2 V −1 s −1 ). The optical absorption peak of the material is in the ultraviolet region. These discoveries expand the potential applications of the emerging field of 2D Sn x P y structures in nanoelectronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two-Dimensional Pentagonal Materials with Parabolic Dispersion and High Carrier Mobility

Xiaofei Shao,Xiaobiao Liu,Xikui Ma

DOI: https://doi.org/10.3390/ma17225543

IF: 3.4

2024-11-17

Materials

Abstract:Materials with high carrier mobility, represented by graphene, have garnered significant interest. However, the zero band gap arising from linear dispersion cannot achieve an ideal on–off ratio in field-effect transistors (FETs), limiting practical applications in certain fields. In contrast, parabolic dispersion usually exhibits extremely high carrier mobility and an appropriate band gap. In this work, we predicted a planar pentagonal lattice composed entirely of pentagons (namely penta-MX2 monolayer), where M = Ni, Pd and Pt, X = group V elements. Using first-principles calculations, we demonstrated a parabolic dispersion within this framework, which results in intriguing phenomena, such as a direct band gap (0.551–1.105 eV) and extraordinary high carrier mobility. For penta-MX2 monolayer, the carrier mobility can attain ~1 × 108 cm2 V−1 s−1 (PBE), surpassing those of black phosphorene, graphene and 2D hexagonal materials. This monolayer also displays anisotropic mechanical properties and significant absorption peaks in the ultraviolet spectrum. Remarkably, 2D penta-MX2 monolayers are promising for successful experimental exfoliation, particularly when X is a nitrogen element, opening up new possibilities for designing two-dimensional semiconductor materials characterized by high carrier mobility.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering

Suction diathermy as an adjunct to endoscopic removal of inverted papilloma

Phosphorene: A New 2D Material with High Carrier Mobility

A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Two-dimensional monolayer B2P6 with anisotropic elastic properties and carrier mobility

Carbon Phosphide Monolayer with Superior Carrier Mobility

Hydrogenated PtP2 Monolayer: Theoretical Predictions on the Structure and Charge Carrier Mobility

The Phosphorene Under The External Electronic Field And Strain

A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate

Penta-Pt2N4: an Ideal Two-Dimensional Material for Nanoelectronics.

ψ-Phosphorene: a new allotrope of phosphorene.

Highly Promoted Carrier Mobility and Intrinsic Stability by Rolling Up Monolayer Black Phosphorus into Nanoscrolls.

GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement

Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Ultrahigh carrier mobility and light-harvesting performance of 2D penta-PdX2 monolayer

A New Phosphorus Allotrope with Direct Band Gap and High Mobility

Electronic Structure and Optical Characteristic for Pd3P2S8 Layers

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

SnxPy Monolayers: a New Type of Two-Dimensional Materials with High Stability, Carrier Mobility, and Magnetic Properties

Two-Dimensional Pentagonal Materials with Parabolic Dispersion and High Carrier Mobility