Abstract:Boron carbide (B4C) is superhard, but its engineering applications are limited by the abnormal brittle failure arising from amorphous shear band formation. Mitigating the local amorphization is essential to improve the ductility of B4C. Here, we carried out ab initio molecular dynamics (AIMD) simulations to examine the response of B4C to shear along two plausible slip systems (001)/[100] and (111)/[112¯] at finite temperature. We found that the icosahedra of B4C gradually deconstruct at finite temperature, resulting in local amorphization, thereby giving rise to a lower stress barrier than that of density functional theory simulations at zero temperature. The deconstruction of the icosahedral clusters arises from the interaction with the neighboring chains. The failure mechanism at the finite temperature suggested that the local amorphization can be suppressed by altering the structure of the 12-atom icosahedron and the 3-atom chain of B4C. To demonstrate this, we replaced the B11CP icosahedron in B4C with B12 icosahedron to form boron-rich boron carbide (B13C2) and then performed the same shear deformations. We found that local amorphization significantly decreases, which results from the modified icosahedral interaction. We also altered the 3-atom C-B-C chain to the 2-atom P-P chain and found that the accumulated shear stress can be released through icosahedral slipping, which is achieved by breaking the chains. The icosahedral slipping then prevents the destruction of icosahedra under shear deformations, expected to improve the ductility. Our results demonstrate two design strategies toward improved ductility of B4C: (1) boron enrichment can alleviate amorphous shear band formation in boron carbide, and (2) altering the 3-atom chain to a 2-atom chain and meanwhile decreasing the strength of the chain to make it less stable than the icosahedron cage may lead to an icosahedral-slipping-dominated mechanism, thereby avoiding icosahedral fracture.

Shear‐induced Amorphization in Boron Subphosphide (B 12 P 2 ): Direct Transition Versus Stacking Fault Mediation

Mitigating Amorphization in Superhard Boron Carbide by Microalloying-Induced Stacking Fault Formation

Atomistic Origin of Shear Induced Quasi-plastic Deformation in Boron Carbide

Shear Amorphization of Boron Suboxide

Dislocation-mediated shear amorphization in boron carbide

Grain Boundary Sliding and Amorphization Are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide

Understanding the Role of 1/2 ⟨110⟩ Dislocations in Deformation Mechanisms of Single-Crystal High-Entropy Carbide Ceramics from Machine Learning Force Field Simulations

Quasiplastic deformation in shocked nanocrystalline boron carbide: Grain boundary sliding and local amorphization

Activating Mobile Dislocation in Boron Carbide at Room Temperature via Al Doping

Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

Amorphous Shear Band Formation in Elemental Β-Boron

Transgranular Amorphous Shear Band Formation in Polycrystalline Boron Carbide

Boron Suboxide and Boron Subphosphide Crystals: Hard Ceramics That Shear Without Brittle Failure

Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide.

Mobile dislocation mediated Hall-Petch and inverse Hall-Petch behaviors in nanocrystalline Al-doped boron carbide

Activating Dislocation Mediated Plasticity in Boron Carbide Through Al-doping

The Quasi-Plastic Deformation Mechanisms and Inverse Hall-Petch Relationship in Nanocrystalline Boron Carbide under Compression

Ductility in Crystalline Boron Subphosphide (b12p2) for Large Strain Indentation

Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Shear-Induced Brittle Failure along Grain Boundaries in Boron Carbide.

High-pressure deformation and amorphization in boron carbide