Dislocation-mediated shear amorphization in boron carbide

Kolan Madhav Reddy,Dezhou Guo,Shuangxi Song,Chun Cheng,Jiuhui Han,Xiaodong Wang,Qi An,Mingwei Chen

DOI: https://doi.org/10.1126/sciadv.abc6714

IF: 13.6

2021-02-19

Science Advances

Abstract:A previously unidentified amorphization mechanism of boron carbide yields insights into the failure of superhard materials.

multidisciplinary sciences

What problem does this paper attempt to address?

Atomistic Origin of Shear Induced Quasi-plastic Deformation in Boron Carbide

Yidi Shen,Kolan Madhav Reddy,Jun Li,Mingwei Chen,Qi An

DOI: https://doi.org/10.1016/j.actamat.2023.118828

IF: 9.4

2023-03-07

Acta Materialia

Abstract:Superhard materials typically exhibit limited plastic deformation due to their strong covalent and ionic bonding. Identifying the deformation mechanisms is crucial to enhance their mechanical properties. By combining molecular dynamics simulations with transmission electron microscopy experiments, we determine the shear-induced crystal defects and their related deformation mechanisms, referred to quasi-plasticity, in superhard boron carbide (B 4 C). Surprisingly, we identify an anomalous quasi-plastic deformation in B 4 C with a larger failure strain under ideal shear deformation along the (111)[ 1 ̄1 ̄ 2] slip system. This behavior arises from slip band formation and propagation, which is stabilized by the newly formed bonding between icosahedra clusters and atomic chains during deformation. The slip band and crystal matrix share a dislocation-like interface, which serves as the nucleation site for the amorphous band formation at a large shear strain. In contrast, the dislocation-like mechanism mediated amorphization is observed in B 4 C as it shears along (021)[ 5 ̄ 1 2 ̄ ], ( 1 ̄11 ̄ )[21 1 ̄ ] and (5 1 ̄ 2)[ 1 ̄5 ̄3 ̄ ] slip systems. We derive the activation volume and energy for the quasi-plastic deformation, which are much lower than those for other deformation mechanisms (e.g. shear banding in amorphous alloys). Therefore, the quasi-plastic deformation may play an essential role in the brittle failure of single crystal B 4 C.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Shear Amorphization of Boron Suboxide

K. Madhav Reddy,A. Hirata,P. Liu,T. Fujita,T. Goto,M. W. Chen

DOI: https://doi.org/10.1016/j.scriptamat.2013.12.001

IF: 6.302

2014-01-01

Scripta Materialia

Abstract:We report for the first time the shear-induced local amorphization of boron suboxide subjected to nanoindentation. The amorphous bands have a width of similar to 1-2 nm and a length of 200-300 nm along the (0 1 1 1) crystal plane. We show direct experimental evidence that the amorphous shear bands of boron suboxide are driven from the coalescence of dislocation loops under high shear stresses. These observations provide insights into the microscopic deformation and failure of high-strength and lightweight ceramics. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Atomic Structure of Amorphous Shear Bands in Boron Carbide

K. Madhav Reddy,P. Liu,A. Hirata,T. Fujita,M.W. Chen

DOI: https://doi.org/10.1038/ncomms3483

IF: 16.6

2013-01-01

Nature Communications

Abstract:Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.
Activating Mobile Dislocation in Boron Carbide at Room Temperature via Al Doping

Jun Li,Kun Luo,and Qi An

DOI: https://doi.org/10.1103/physrevlett.130.116104

IF: 8.6

2023-03-16

Physical Review Letters

Abstract:Dislocation glide, deformation twinning, and phase transition are critical mechanisms resulting in irreversible plastic deformations of materials. Because of the lack of dislocation movement, superhard ceramics generally exhibit brittle failure at room temperature. Here, by employing molecular dynamics simulations using a machine-learning force field, we reveal several plastic deformation mechanisms in superhard boron carbide as a small amount of aluminum (Al) is doped. Under shear deformation, dislocation nucleation and glide occur in Al-doped boron carbide ( B12 -CAlC) due to the breakage of weakened chain bonds rather than the disintegration of icosahedral clusters. The dislocation activities then cause twin boundaries to migrate, thereby mitigating amorphization and enhancing ductility. Furthermore, the mobile dislocation with the Burgers vector of b=⟨11 ̄0⟩{111} is observed in the tensile nanopillar, which is well consistent with the experiment. This Letter demonstrates that mobile dislocation could be activated in superstrong covalent materials through a simple doping strategy. https://doi.org/10.1103/PhysRevLett.130.116104 © 2023 American Physical Society

physics, multidisciplinary
Mitigating Amorphization in Superhard Boron Carbide by Microalloying-Induced Stacking Fault Formation

Qi An

DOI: https://doi.org/10.1103/physrevmaterials.5.103602

IF: 3.98

2021-01-01

Physical Review Materials

Abstract:The abnormal brittle failure of superhard boron carbide (B4C) and other icosahedral solids arises from the shear-induced amorphization. Mitigating the amorphization in these materials remains challenging due to the lack of other deformation mechanisms such as mobile dislocations. This paper illustrates the shear-induced amorphization process of B4C from molecular dynamics (MD) simulations using quantum-mechanics-derived machine-learning force field. The amorphization in B4C initiates from the disintegration of icosahedral clusters, and then this icosahedral deconstruction propagates and merges to form an amorphous region with 2-3 nm in width, leading to the following cavitation and brittle failure. More interesting, the deformation mechanism transforms from amorphization to stacking fault (SF) formation by microalloying aluminum (Al) into B4C. This SF formation originates from the enhanced icosahedral slip as the Al is incorporated into the C-B-C chain to form a C-Al-C chain. This paper illustrates a deformation mechanism of superhard icosahedral solids and provides a strategy for suppressing the amorphization and brittle failure of B4C.
Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

Jun Li,Qi An,Lisheng Liu

DOI: https://doi.org/10.1103/physrevb.104.134105

IF: 3.7

2021-10-14

Physical Review B

Abstract:Boron carbide (B4C) is superhard, but its engineering applications are limited by the abnormal brittle failure arising from amorphous shear band formation. Mitigating the local amorphization is essential to improve the ductility of B4C. Here, we carried out ab initio molecular dynamics (AIMD) simulations to examine the response of B4C to shear along two plausible slip systems (001)/[100] and (111)/[112¯] at finite temperature. We found that the icosahedra of B4C gradually deconstruct at finite temperature, resulting in local amorphization, thereby giving rise to a lower stress barrier than that of density functional theory simulations at zero temperature. The deconstruction of the icosahedral clusters arises from the interaction with the neighboring chains. The failure mechanism at the finite temperature suggested that the local amorphization can be suppressed by altering the structure of the 12-atom icosahedron and the 3-atom chain of B4C. To demonstrate this, we replaced the B11CP icosahedron in B4C with B12 icosahedron to form boron-rich boron carbide (B13C2) and then performed the same shear deformations. We found that local amorphization significantly decreases, which results from the modified icosahedral interaction. We also altered the 3-atom C-B-C chain to the 2-atom P-P chain and found that the accumulated shear stress can be released through icosahedral slipping, which is achieved by breaking the chains. The icosahedral slipping then prevents the destruction of icosahedra under shear deformations, expected to improve the ductility. Our results demonstrate two design strategies toward improved ductility of B4C: (1) boron enrichment can alleviate amorphous shear band formation in boron carbide, and (2) altering the 3-atom chain to a 2-atom chain and meanwhile decreasing the strength of the chain to make it less stable than the icosahedron cage may lead to an icosahedral-slipping-dominated mechanism, thereby avoiding icosahedral fracture.

physics, condensed matter, applied,materials science, multidisciplinary
Activating Dislocation Mediated Plasticity in Boron Carbide Through Al-doping

Qirong Yang,Christopher J. Marvel,Yidi Shen,Mo-Rigen He,Jun Du,Chawon Hwang,Eric D. Gronske,Kelvin Y. Xie,Steven R. Mercurio,Qi An,Martin P. Harmer,Kevin J. Hemker,Richard A. Haber

DOI: https://doi.org/10.1016/j.actamat.2022.118412

IF: 9.4

2022-01-01

Acta Materialia

Abstract:Dislocation slip, deformation twinning, phase transformations, and fast fracture are energy dissipation mechanisms that accommodate mechanical loading in materials. The energetically unfavorable formation of dislocation attributes to the ease of cracking and the low damage tolerance observed in superhard ceramics, notably boron carbide. This work demonstrates that room temperature dislocation slip can be enabled in boron carbide by altering its chemistry through Al doping. The activation of dislocation slip is mechanistically explained by quantum mechanics simulations and electron microscopy, which indicate that strain energy is released through basal icosahedral slip facilitated by icosahedral rotation and chain bond breaking and reconfiguring. The new insight gained from this work suggests that atomic doping could be an effective strategy to tune deformation mechanisms in boron carbide, which provides a significant potential for limiting amorphization and catastrophic failure, and opens a new strategy to enhance damage tolerance in brittle ceramics.
Amorphous Shear Band Formation in Elemental Β-Boron

Tingwei Guo,Yidi Shen,Haibo Zhang,Simanta Lahkar,Zhifu Zhang,Shuangxi Song,Qi An,Kolan Madhav Reddy

DOI: https://doi.org/10.1016/j.matchar.2024.113684

IF: 4.537

2024-01-01

Materials Characterization

Abstract:We report the formation of shear-induced amorphization in elemental β‑boron (β-B) using transmission electron microscopy (TEM) and density function theory (DFT) simulations. TEM observations beneath the residual indentation of β-B revealed intragranular nanoscale shear bands along 1¯11¯ and 111 crystallographic planes, which are preceded by nucleation of dislocations. Strain map analyses of the shear band indicated that compressive strain assists in the process of bond breaking and shear strain is involved in the disassembly of icosahedral clusters by forming amorphization within a unit cell of β-B. Further DFT simulations confirmed that the deconstruction of triply fused icosahedral (B28) along 11¯0111slip system in β-B106 has the lowest shear strength leading to the formation of a kink followed by amorphization, which is in line with our experimental observations. This study illustrates the structural evolution of shear amorphization in β-B and provides the basis to improve their mechanical properties through modification of internal structure.
Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide.

Qi An,William A. Goddard,Tao Cheng

DOI: https://doi.org/10.1103/physrevlett.113.095501

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (01 (1) over bar(1) over bar)/<(1) over bar 101 > slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.
Transgranular Amorphous Shear Band Formation in Polycrystalline Boron Carbide

Dezhou Guo,Qi An

DOI: https://doi.org/10.1016/j.ijplas.2019.06.004

IF: 8.5

2019-01-01

International Journal of Plasticity

Abstract:Intragranular failure plays an important role in the failure process of superhard nanocrystalline ceramics. But the atomistic deformation mechanisms leading to intragranular failure have not been well established. Here we performed large-scale reactive force field (ReaxFF) reactive molecular dynamics (RMD) simulations on the finite shear deformation of nanocrystalline boron carbide (n-B4C) with a grain size of 9.74 nm. We find that intragranular amorphization initiates from grain boundaries (GBs) and propagates along the rhombohedral (011)<21¯1¯> slip system. To illustrate the atomic mechanism of amorphous shear band formation along this slip system, we combined density functional theory (DFT) and RMD simulations on the shear deformation of single crystal B4C. These simulations displayed that the dislocation nucleation occurs along this slip system, accompanied with bond breaking of intraicosahedral bonds within B11C cage. This leads to the amorphous shear band formation under the applied shear deformation. Our simulations suggest that the coupling of dislocation nucleation and GB sliding leads to the intragranular amorphous shear band formation and may leads to the intragranular failure in n-B4C.
Mitigating the Formation of Amorphous Shear Band in Boron Carbide

Yidi Shen,Jon Fuller,Qi An

DOI: https://doi.org/10.1063/5.0044526

IF: 2.877

2021-01-01

Journal of Applied Physics

Abstract:Boron carbide is super-strong and has many important engineering applications such as body armor and cutting tools. However, the extended applications of boron carbide have been limited by its low fracture toughness arising from anomalous brittle failure when subjected to hypervelocity impact or under high pressure. This abnormal brittle failure is directly related to the formation of a tiny amorphous shear band of 2–3 nm in width and several hundred nm in length. In this Perspective, we discuss mitigating the amorphous shear bands in boron carbide from various strategies including microalloying, grain boundary engineering, stoichiometry control, and the addition of a second phase. Combined with recent theoretical and experimental studies, we discuss strategies that can be applied in synthesizing and producing boron carbide-based materials with improved ductility by suppressing the formation of the amorphous shear band.
Shear‐induced Amorphization in Boron Subphosphide (B 12 P 2 ): Direct Transition Versus Stacking Fault Mediation

Jun Li,Qi An

DOI: https://doi.org/10.1111/jace.18629

IF: 4.186

2022-01-01

Journal of the American Ceramic Society

Abstract:The shear-induced amorphization has been observed in many strong ceramics and is responsible for their cracking and fragmentation. But its underlying mechanism remains elusive due to the complex structure and bonding environment in strong ceramics. To illustrate the deformation mechanism of local amorphization in strong ceramics, we employed molecular dynamics simulations with a deep-learning force field to examine the shear-induced amorphization in B12P2. Surprisingly, we identified a stacking-fault-mediated amorphization mechanism along the most plausible slip system (1 1 1)/[1 1 2 over bar $\bar{2}$]. This mechanism is even more favorable at a higher temperature than room temperature. In contrast, the direct crystal to amorphization transition, due to the icosahedral slip, is observed for the other most plausible slip system (0 1 1)/[2 1 over bar $\bar{1}$1 over bar $\bar{1}$]. We report the activation volume and the activation free energy for the amorphization along the (1 1 1)/[1 1 2 over bar $\bar{2}$] slip system. The derived activation volume is only 41.47 A(3), which is roughly 2-3 icosahedra, suggesting that the localized amorphization in B12P2 is mediated by stacking fault formation. The previous results suggest complex amorphization mechanisms in strong ceramics.
Shear-Induced Brittle Failure along Grain Boundaries in Boron Carbide.

Xiaokun Yang,Shawn P. Coleman,Jerry C. Lasalvia,William A. Goddard,Qi An

DOI: https://doi.org/10.1021/acsami.7b16782

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:The role that grain boundaries (GBs) can play on mechanical properties has been studied extensively for metals and alloys. However, for covalent solids such as boron carbide (B4C), the role of GB on the inelastic response to applied stresses is not well established. We consider here the unusual ceramic, boron carbide (B4C), which is very hard and lightweight but exhibits brittle impact behavior. We used quantum mechanics (QM) simulations to examine the mechanical response in atomistic structures that model GBs in B4C under pure shear and also with biaxial shear deformation that mimics indentation stress conditions. We carried out these studies for two simple GB models including also the effect of adding Fe atoms (possible sintering aid and/or impurity) to the GB. We found that the critical shear stresses of these GB models are much lower than that for crystalline and twinned B4C. The two GB models lead to different interfacial energies. The higher interfacial energy at the GB only slightly decreases the critical shear stress but dramatically increases the critical failure strain. Doping the GB with Fe decreases the critical shear stress of at the boundary by 14% under pure shear deformation. In all GBs studied here, failure arises from deconstructing the icosahedra within the GB region under shear deformation. We find that Fe dopant interacts with icosahedra at the GB to facilitate this deconstruction of icosahedra. These results provide significant insight into designing polycrystalline B4C with improved strength and ductility.
Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Byeongyun Jeong,Yidi Shen,Xiaodong Wang,Qi An,Kolan Madhav Reddy

DOI: https://doi.org/10.1016/j.scriptamat.2023.115561

IF: 6.302

2023-01-01

Scripta Materialia

Abstract:Shear amorphization induced by high stress in cubic silicon carbide (β-SiC) has not yet been experimentally observed till-to-date. In this letter, we report the detailed evolution of stress-induced amorphization in superhard β-SiC using transmission electron microscopy (TEM) and molecular dynamics (MD) simulations. From experimental observations using TEM, shearing by stacking faults along (111) crystallographic plane triggers the onset of amorphization. Further, an increase in the stress results in highly localized strains within the amorphous band led by the coalescence of vicinity dislocations. Based on the MD simulations, it has been verified that the existence of stacking faults decreases the amount of shear stress and shear strain necessary to trigger amorphization compared to the pristine β-SiC, which is in line with experimental observations. This study underscores a detailed understanding of the amorphization process in superhard materials through which stress is alleviated in high-stress environments.
Boron Suboxide and Boron Subphosphide Crystals: Hard Ceramics That Shear Without Brittle Failure

Qi An,William A. Goddard

DOI: https://doi.org/10.1021/cm5046918

IF: 10.508

2015-01-01

Chemistry of Materials

Abstract:Boron suboxide (B6O), boron carbide (B4C), and related materials are superhard. However, they exhibit low fracture toughness, which limits their engineering, applications. Here we show the shear deformation mechanism of B6O using density functional theory along the most plausible slip system (0 (1) over bar 11)/<10<(1)over bar>1>. We discovered an unusual phenomenon in which the highly sheared system recovers its original crystal structure, which indicates the possibility of being sheared to a large strain without failure. We also found a similar structural recovery in boron subphosphide (B12P2) for shearing along the same slip system. In contrast, for components of B4C, we found brittle failure. These novel deformation mechanisms under high shear deformation conditions suggest that a key element to designing ductile hard materials is to couple the icosahedra via one- or two-atom chains that allow the system to shear by walking the intericosahedral bonds and chain bonds alternately to accommodate large shear without fracturing the icosahedra.
High-pressure deformation and amorphization in boron carbide

Amnaya P. Awasthi,Ghatu Subhash

DOI: https://doi.org/10.1063/1.5091795

IF: 2.877

2019-06-07

Journal of Applied Physics

Abstract:Icosahedral boron-rich solids fall second in hardness to diamondlike structures and have been the subject of intense investigations over the past two decades, as they possess low density, high thermal, and mechanical stability at high temperatures, and superior industrial manufacturability. A common deleterious feature called "presssure-induced amorphization," limits their performance in high-velocity projectile applications. This article discusses spectral characteristics of amorphized states of boron carbide, a common icosahedral boron-rich ceramic, with the goal of understanding the mechanistic layout of pressure-induced amorphization. Mystery has surrounded the appearance of new peaks in Raman spectrum of pressure-induced amorphized boron carbide, but to date, no convincing explanation exists on their origin. Shock studies of boron carbide have proposed phase transformation at high pressures, but to date, no conclusive evidence has been corroborative to prove the existence of new high-pressure phases. We propose a new rationale toward deciphering the amorphization phenomenon in boron carbide centered on a thermodynamic approach to explain atomic interactions in amorphous islands. Quantum mechanical simulations are utilized to understand the impact of stresses on Raman spectra, while results from molecular dynamics (MD) simulations of volumetric compression are used to understand thermodynamic aspects of amorphization. Atomic-level nonbonded interactions from the MD potential are utilized to demonstrate origins of the residual pressure. Combining these efforts, the present study deciphers the connection between deformation behavior of boron carbide at high pressure and its mysterious amorphous Raman spectrum. The approach highlights the importance of meticulously incorporating multiscale modeling considerations in determining accurate material behavior of ultrahard materials.

physics, applied
Locating Si Atoms in Si-doped Boron Carbide: A Route to Understand Amorphization Mitigation Mechanism

Atta U. Khan,Anthony M. Etzold,Xiaokun Yang,Vladislav Domnich,Kelvin Y. Xie,Chawon Hwang,Kristopher D. Behler,Mingwei Chen,Qi An,Jerry C. LaSalvia,Kevin J. Hemker,William A. Goddard,Richard A. Haber

DOI: https://doi.org/10.1016/j.actamat.2018.07.021

IF: 9.4

2018-01-01

Acta Materialia

Abstract:The well-documented formation of amorphous bands in boron carbide (B4C) under contact loading has been identified in the literature as one of the possible mechanisms for its catastrophic failure. To mitigate amorphization, Si-doping was suggested by an earlier computational work, which was further substantiated by an experimental study. However, there have been discrepancies between theoretical and experimental studies, about Si replacing atom/s in B12 icosahedra or the C-B-C chain. Dense single phase Si-doped boron carbide was produced through a conventional scalable route. A powder mixture of SiB6, B4C, and amorphous boron was reactively sintered, yielding a dense single phase Si-doped boron carbide material. A combined analysis of Rietveld refinement on XRD pattern coupled with electron density difference Fourier maps and DFT simulations were performed in order to investigate the location of Si atoms in the boron carbide lattice. Si atoms occupy an interstitial position, between the icosahedra and the chain. These Si atoms are bonded to the chain end C atoms, which result in a kinked chain. Additionally, these Si atoms are also bonded to the neighboring equatorial B atom of the icosahedra, which is already bonded to the C atom of the chain, forming a bridge like structure. Owing to this bonding, Si is anticipated to stabilize the icosahedra through electron donation, which is expected to help in mitigating stress-induced amorphization. Possible supercell structures are suggested along with the most plausible structure for Si-doped boron carbide.
Strengthening boron carbide by doping Si into grain boundaries

Yidi Shen,Moon Young Yang,William A. Goddard,Qi An

DOI: https://doi.org/10.1111/jace.18028

IF: 4.186

2021-07-22

Journal of the American Ceramic Society

Abstract:<p>Grain boundaries, ubiquitous in real materials, play an important role in the mechanical properties of ceramics. Using boron carbide as a typical superhard but brittle material under hypervelocity impact, we report atomistic reactive molecular dynamics simulations using the ReaxFF reactive force field fitted to quantum mechanics to examine grain boundary engineering strategies aimed at improving the mechanical properties. In particular, we examine the dynamical mechanical response of two grain boundary models with or without doped Si as a function of finite shear deformation. Our simulations show that doping Si into the grain boundary significantly increases the shear strength and stress threshold for amorphization and failure for both grain boundary structures. These results provide validation of our suggestions that Si doping provides a promising approach to mitigate amorphous band formation and failure in superhard boron carbide.</p>

materials science, ceramics
Grain Boundary Sliding and Amorphization Are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide

Dezhou Guo,Shuangxi Song,Ruichun Luo,William A. Goddard,Mingwei Chen,Kolan Madhav Reddy,Qi An

DOI: https://doi.org/10.1103/physrevlett.121.145504

IF: 8.6

2018-01-01

Physical Review Letters

Abstract:The recent observation of the reverse Hall-Petch relation in nanocrystalline ceramics offers a possible pathway to achieve enhanced ductility for traditional brittle ceramics via the nanosize effect, just as nanocrystalline metals and alloys. However, the underlying deformation mechanisms of nanocrystalline ceramics have not been well established. Here we combine reactive molecular dynamics (RMD) simulations and experimental transmission electron microscopy to determine the atomic level deformation mechanisms of nanocrystalline boron carbide (B_{4}C). We performed large-scale (up to ∼3 700 000 atoms) ReaxFF RMD simulations on finite shear deformation of three models of grain boundaries with grain sizes from 4.84 (135 050 atoms) to 14.64 nm (3 702 861 atoms). We found a reverse Hall-Petch relationship in nanocrystalline B_{4}C in which the deformation mechanism is dominated by the grain boundary (GB) sliding. This GB sliding leads to the amorphous band formation at predistorted icosahedral GB regions with initiation of cavitation within the amorphous bands. Our simulation results are validated by the experimental observations of an intergranular amorphous GB phase due to GBs sliding under indentation experiments. These theoretical and experimental results provide an atomistic explanation for the influence of GBs on the deformation behavior of nanocrystalline ceramics, explaining the reverse Hall-Petch relation.
Quasiplastic deformation in shocked nanocrystalline boron carbide: Grain boundary sliding and local amorphization

Jun Li,Qi An

DOI: https://doi.org/10.1016/j.jeurceramsoc.2022.10.014

IF: 5.7

2022-10-19

Journal of the European Ceramic Society

Abstract:Materials respond to shock in many ways such as plastic flow in metals and amorphization in ceramics. It is very challenging to characterize the deformation mechanisms of ceramics under shock compression due to extreme loading conditions. Here we report the shock response of nanocrystalline boron carbide ( n -B 4 C) using large-scale molecular dynamics simulations with a machine-learning force field. We identify three quasiplastic deformation mechanisms in shocked n -B 4 C: grain boundary (GB) sliding, intergranular amorphization, and intragranular amorphization. As the deformation mechanism changes from GB sliding to intergranular amorphization at ∼40 GPa, a bilinear Hugoniot behavior occurs, consistent with experimental observations. At higher pressure (>∼100 GPa), intragranular amorphization becomes dominant, causing a complete loss of shear strength. These quasiplastic mechanisms may play an important role in the shock behaviors of ceramics.

materials science, ceramics

Dislocation-mediated shear amorphization in boron carbide

Atomistic Origin of Shear Induced Quasi-plastic Deformation in Boron Carbide

Shear Amorphization of Boron Suboxide

Atomic Structure of Amorphous Shear Bands in Boron Carbide

Activating Mobile Dislocation in Boron Carbide at Room Temperature via Al Doping

Mitigating Amorphization in Superhard Boron Carbide by Microalloying-Induced Stacking Fault Formation

Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

Activating Dislocation Mediated Plasticity in Boron Carbide Through Al-doping

Amorphous Shear Band Formation in Elemental Β-Boron

Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide.

Transgranular Amorphous Shear Band Formation in Polycrystalline Boron Carbide

Mitigating the Formation of Amorphous Shear Band in Boron Carbide

Shear‐induced Amorphization in Boron Subphosphide (B 12 P 2 ): Direct Transition Versus Stacking Fault Mediation

Shear-Induced Brittle Failure along Grain Boundaries in Boron Carbide.

Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Boron Suboxide and Boron Subphosphide Crystals: Hard Ceramics That Shear Without Brittle Failure

High-pressure deformation and amorphization in boron carbide

Locating Si Atoms in Si-doped Boron Carbide: A Route to Understand Amorphization Mitigation Mechanism

Strengthening boron carbide by doping Si into grain boundaries

Grain Boundary Sliding and Amorphization Are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide

Quasiplastic deformation in shocked nanocrystalline boron carbide: Grain boundary sliding and local amorphization