Abstract:Boron carbide (B4C) is superhard, but its engineering applications are limited by the abnormal brittle failure arising from amorphous shear band formation. Mitigating the local amorphization is essential to improve the ductility of B4C. Here, we carried out ab initio molecular dynamics (AIMD) simulations to examine the response of B4C to shear along two plausible slip systems (001)/[100] and (111)/[112¯] at finite temperature. We found that the icosahedra of B4C gradually deconstruct at finite temperature, resulting in local amorphization, thereby giving rise to a lower stress barrier than that of density functional theory simulations at zero temperature. The deconstruction of the icosahedral clusters arises from the interaction with the neighboring chains. The failure mechanism at the finite temperature suggested that the local amorphization can be suppressed by altering the structure of the 12-atom icosahedron and the 3-atom chain of B4C. To demonstrate this, we replaced the B11CP icosahedron in B4C with B12 icosahedron to form boron-rich boron carbide (B13C2) and then performed the same shear deformations. We found that local amorphization significantly decreases, which results from the modified icosahedral interaction. We also altered the 3-atom C-B-C chain to the 2-atom P-P chain and found that the accumulated shear stress can be released through icosahedral slipping, which is achieved by breaking the chains. The icosahedral slipping then prevents the destruction of icosahedra under shear deformations, expected to improve the ductility. Our results demonstrate two design strategies toward improved ductility of B4C: (1) boron enrichment can alleviate amorphous shear band formation in boron carbide, and (2) altering the 3-atom chain to a 2-atom chain and meanwhile decreasing the strength of the chain to make it less stable than the icosahedron cage may lead to an icosahedral-slipping-dominated mechanism, thereby avoiding icosahedral fracture.

Amorphous Shear Band Formation in Elemental Β-Boron

Atomic Structure of Amorphous Shear Bands in Boron Carbide

Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide.

Shear Amorphization of Boron Suboxide

Atomistic Origin of Shear Induced Quasi-plastic Deformation in Boron Carbide

Shear Band Mediated Ω Phase Transformation in Nb Single Crystals Deformed at 77 K

Transgranular Amorphous Shear Band Formation in Polycrystalline Boron Carbide

Brittle Failure of Β- and Τ-Boron: Amorphization under High Pressure

Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

Dislocation-mediated shear amorphization in boron carbide

Nucleation of Amorphous Shear Bands at Nanotwins in Boron Suboxide

Mitigating the Formation of Amorphous Shear Band in Boron Carbide

Deformation Induced Solid–Solid Phase Transitions in Gamma Boron

Evolution of Pressure-induced Shear Amorphization in Rare-earth Hexaboride

Unravelling mechanisms for the formation of amorphous bands in B6O under nonhydrostatic pressure

Shear‐induced Amorphization in Boron Subphosphide (B 12 P 2 ): Direct Transition Versus Stacking Fault Mediation

Shear-Induced Brittle Failure along Grain Boundaries in Boron Carbide.

Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Shear Band Formation During Nanoindentation of EuB6 Rare-Earth Hexaboride

Abstract Submitted for the MAR16 Meeting of The American Physical Society Modeling Shear Banding in Amorphous Solids, from Atomistic to Continuum1

Nanotwinned Boron Suboxide (B_6O): New Ground State of B_6O