Abstract:An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a self-consistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.

Insights of VG-dependent Threshold Voltage Fluctuations from Dual-Point Random Telegraph Noise Characterization in Nanoscale Transistors.

A Dual-Point Technique for the Entire ID–VG Characterization into Subthreshold Region under Random Telegraph Noise Condition

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

An Assessment Of Rtn-Induced Threshold Voltage Jitter

Extracting Statistical Distributions of RTN Originating from Both Acceptor-Like and Donor-Like Traps

Random Telegraph Noise on the Threshold Voltage of Multi-Level Flash Memory

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method

The Physical Mechanisms of IG Random Telegraph Noise in Deeply Scaled Pmosfets

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

The Impact of Random Telegraph Signals on the Threshold Voltage Variation of 65 Nm Multilevel nor Flash Memory

New Observations on the AC Random Telegraph Noise (AC RTN) in Nano-Mosfets

New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (rtn) in Devices and Circuits

TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Evaluation and Mitigation of Performance Degradation under Random Telegraph Noise for Digital Circuits

Statistical analysis of random telegraph noise in digital circuits

Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits