Detection of Glucose Using Diamond Solution-Gate Field-Effect Transistor

Qianwen Zhang,Xiaohui Chang,Bangqiang Xu,Yanfeng Wang,Dan Zhang,Yangmeng Feng,Shi He,Genqiang Chen,Qi Li,Juan Wang,Hong-Xing Wang
DOI: https://doi.org/10.1109/ted.2022.3184918
IF: 3.1
2022-01-01
IEEE Transactions on Electron Devices
Abstract:The concentration of glucose was detected using an H-terminated diamond solution-gate field-effect transistor (H-diamond SGFET). The linker molecular 1-pyrenebutyric acid–N-hydroxy succinimide ester (Pyr-NHS) was introduced to modify the H-diamond surface. Then, glucose oxidase (GOD) was immobilized on the diamond surface by linker Pyr-NHS. Atomic force microscope and scanning electron microscope measurements confirmed the successful immobilization of Pyr-NHS and GOD enzyme on the H-diamond surface. The concentration of glucose was determined by the shift of gate voltage ( ${V}_{\text {GS}}$ ) in transfer characteristics of H-diamond SGFET. Also, the sensitivity of sensor for glucose detection was obtained as −58.69 mV/ ${\text {log}}_{{10}}$ (glucose concentration) by the slope of fitting curve, which represented the relationship between ${\Delta {V}}_{\text {GS}}$ and logarithmic of glucose with concentration increasing from 1 $\times 10^{-{3}}$ to 1 M. The reusability of device was characterized by the transfer properties and small standard deviation (SD) of maximum output current ( ${I}_{\text {DS(max)}}$ ) in four tests, indicating excellent reusability for detection of glucose.
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