Polarization-insensitive Thin-Film Lithium Niobate Electro-Optic Modulator

Ying Pan,Mingbo He,Mengyue Xu,Zhongjin Lin,Wei Ke,Yanmei Lin,Siyuan Yu,Xinlun Cai

DOI: https://doi.org/10.1364/cleo_si.2022.sf4g.7

2022-01-01

Abstract:Based on the thin-film lithium niobate platform, we experimentally demonstrate a polarization-insensitive electro-optic modulator which features a polarization-dependent loss of 0.35 dB and an on-chip loss of less than 2 dB.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Polarization-Insensitive Electrooptic Modulation on Anisotropic Thin-Film Lithium Niobate

Xiaoyan Liu,Nuo Chen,Tao Chu

DOI: https://doi.org/10.1021/acsphotonics.4c00020

IF: 7

2024-01-01

ACS Photonics

Abstract:Lithium niobate (LN) is an ideal material for electrooptic (EO) modulation due to its strong EO effect. However, significant differences exist in the EO modulation efficiencies for different polarizations, given the anisotropy of LN. Here, we propose an innovative approach to mitigate the modulation polarization dependence of thin-film LN. We convert one of the orthogonal polarizations of the incident light to the higher-order mode of the other polarization and utilize mode-compatible components to achieve mode-independent signal processing, thereby converting the polarization issue into a mode issue and achieving polarization-independent signal processing. We also demonstrated a polarization-insensitive EO switch to validate this approach. The fabricated device demonstrates a low polarization-dependent loss of 0-2.4 dB across a 30 nm range (1260-1290 nm) and achieves the same modulation efficiency of 2.7 Vcm for TE and TM polarizations. The approach provides a robust solution to the EO modulation polarization dependence problem caused by the anisotropy in LN and other similar materials.
Compact Substrate-Removed Thin-Film Lithium Niobate Electro-Optic Modulator Featuring Polarization-Insensitive Operation.

Ying Pan,Mingbo He,Mengyue Xu,Zhongjin Lin,Yanmei Lin,Wei Ke,Jie Liu,Zhenrui Lin,Yuntao Zhu,Shenqian Gao,Hao Li,Xiaoyue Liu,Chuan Liu,Siyuan Yu,Xinlun Cai

DOI: https://doi.org/10.1364/ol.454277

IF: 3.6

2022-01-01

Optics Letters

Abstract:A compact polarization-insensitive electro-optic (EO) modulator, which allows the laser and modulator to be located at different locations while using a standard single-mode fiber to interconnect them, is highly desirable for 5G or future 6G wireless networks. Herein, we propose a modulator based on substrate-removed thin-film lithium niobate. The proposed device exhibits a polarization-dependent loss of 0.35 dB and on-chip loss of approximately 2 dB. The polarization insensitivity of the proposed device was experimentally demonstrated using a four-level pulse-amplitude modulation format at 50 Gbaud (100 Gb/ s).
High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Nuo Chen,Yalong Yu,Kangping Lou,Qingjiao Mi,Tao Chu

DOI: https://doi.org/10.1364/ol.481827

2023-01-01

Abstract:We demonstrate a low-loss, high-efficiency lithium niobate electro-optic (EO) modulator with optical isolation trenches to achieve stronger field confinement and reduced light absorption loss. The proposed modulator realized considerable improvements, including a low half-wave voltage-length product of 1.2 V center dot cm, an excess loss of similar to 2.4 dB, and a broad 3-dB EO bandwidth of over 40 GHz. We developed a lithium niobate modulator with, to the best of our knowledge, the highest reported modulation efficiency of any Mach-Zehnder interferometer (MZI) modulator. (c) 2023
Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

N. Chen,Y. Yu,K. Lou,T. Chu

DOI: https://doi.org/10.23919/moc58607.2023.10302829

2023-01-01

Abstract:We propose a thin-film lithium niobate electro-optic modulator with ultra-high modulation efficiency by incorporating optical isolation trenches, which enables closer electrode placement and situates the optical waveguide within a more potent electric field. The proposed modulator achieves a record 1.2 V$\cdot$ cm efficiency while maintaining a wide electro-optic bandwidth.
High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Nuo Chen,Yalong Yu,Kangping Lou,Xuanjian He,Qingjiao Mi,Ying Huang,Hengsong Yue,Tao Chu

DOI: https://doi.org/10.1364/iprsn.2023.ith2b.1

2023-01-01

Abstract:We propose two novel methods to enhance the modulation efficiency of thin-film lithium niobate electro-optic modulators. The proposed modulator achieves a modulation efficiency of 1.2 V∙cm, while maintaining a broad EO bandwidth.
Single-Sideband Modulation Through Polarization Interband Transition in Thin-Film Lithium Niobate Waveguide

Di Zhu,Yaowen Hu,Boris Desiatov,Linbo Shao,Mengjie Yu,Marko Loncar

DOI: https://doi.org/10.1364/cleo_si.2021.sw3a.1

2021-01-01

Abstract:We demonstrate an electro-optic polarization modulator on thin-film lithium niobate. It realizes indirect interband transition between two polarization modes and enables non-reciprocal, single-sideband modulation.
Thin-film Lithium Niobate Polarization Modulator Without Polarization Diversity.

Xuerui Sun,Yinan Wu,Chuanyi Lu,Hao Li,Xiaona Ye,Yuting Zhang,Shijie Liu,Yuanlin Zheng,Xianfeng Chen

DOI: https://doi.org/10.1364/oe.468533

IF: 3.8

2022-01-01

Optics Express

Abstract:With the development of photonic integrated circuits and optical information processing on thin-film lithium niobate (TFLN), the realization of the TFLN-based polarization device is becoming more and more crucial. Here, we demonstrate a polarization modulator on the TFLN platform without polarization diversity. Without polarization manipulation elements, the device only composes a phase modulator and a two-dimensional grating coupler. The structure features small footprint and high fabrication tolerance. The device holds promise for polarization encoding telecommunication.
Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Hao Liu,Xuecheng Liu,Bing Xiong,Changzheng Sun,Zhibiao Hao,Lai Wang,Jian Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2022.sf4g.5

2022-01-01

Abstract:A thin-film lithium niobate modulator employing low-loss capacitively-loaded traveling-wave electrodes terminated by an on-chip resistor is demonstrated, with 6-dB electrical bandwidth over 150 GHz, ultra-flat electro-optic response and low half-wave voltage of 2 V.
Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum

Guangyuan Chen,Ning Xue,Zhimei Qi,Weichao Ma,Wangzhe Li,Zhenhu Jin,Jiamin Chen

DOI: https://doi.org/10.3390/mi15040516

2024-04-12

Abstract:Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.
Broadband Thin-Film Lithium Niobate Electro-Optic Modulator

Jinming Tao,Yinuo Yang,Xintong Li,Peng Wang,Jinye Li,Jianguo Liu

DOI: https://doi.org/10.3390/photonics11040325

IF: 2.536

2024-03-31

Photonics

Abstract:Recently, thin-film lithium niobate electro-optical modulators have developed rapidly and have become the core solution for the next generation of electro-optical problems. Compared with bulk lithium niobate modulators, these modulators not only retain the advantages of lithium niobate materials, such as low loss, high extinction ratio, high linear response and high optical power handling capabilities, but can also effectively improve some performance parameters, such as the voltage bandwidth performance of the modulator. Unfortunately, the extremely small electrode gap of thin-film lithium niobate EO (electro-optic) modulators causes metal absorption, resulting in higher microwave losses. The electro-optical performance of the modulator, thus, deteriorates at high frequencies. We designed traveling-wave electrodes with microstructures to overcome this limitation and achieve a 3 dB electro-optical bandwidth of 51.2 GHz. At the same time, we maintain low on-chip losses of <2 dB and a high extinction ratio of 15 dB. It is important to note that the devices we manufactured were metal-encapsulated and passed a series of reliability tests. The success of this modulator module marks a key step in the commercialization and application of thin-film lithium niobate modulation devices.

optics
Low-loss and Broadband Complementary Dual-Output Electro-Optic Modulator Based on Thin-Film Lithium Niobate

Tingan Li,Chenglin Shang,Xuanhao Wang,Weiqiang Lue,Zhiyao Zhang,Cheng Zeng,Yong Liu,Jinsong Xia

DOI: https://doi.org/10.3788/col202422.092201

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:Broadband, low-drive voltage electro-optic modulators are crucial optoelectronic components in the new-generation microwave photonic links and broadband optical interconnect network applications. In this paper, we fabricate a low-loss thinfilm lithium niobate complementary dual-output electro-optic modulator chip with a 3 dB electro-optic bandwidth of 59 GHz and a half-wave voltage (V pi) of 2.5 V. The insert-loss of the packaged modulator is 4.2 dB after coupling with polarizationmaintaining fiber. The complementary dual-output modulator also shows a common-mode rejection ratio of 18 dB and a signal enhancement of 6.2 dB when adapted in microwave photonic links, comparable to commercial bulk lithium niobate devices.
High-efficiency electro-optic modulator on thin-film lithium niobate with high-permittivity cladding

Nuo Chen,Kangping Lou,Yalong Yu,Xuanjian He,Tao Chu

2023-04-14

Abstract:Thin-film lithium niobate is a promising platform owing to its large electro-optic coefficients and low propagation loss. However, the large footprints of devices limit their application in large-scale integrated optical systems. A crucial challenge is how to maintain the performance advantage given the design space restrictions in this situation. This article proposes and demonstrates a high-efficiency lithium niobate electro-optic (EO) modulator with high-permittivity cladding to improve the electric field strength in waveguides and its overlap with optical fields while maintaining low optical loss and broad bandwidth. The proposed modulator exhibits considerable improvement, featuring a low half-wave voltage-length product of 1.41 Vcm, a low excess loss of 0.5 dB, and a broad 3 dB EO bandwidth of more than 40 GHz. This modulation efficiency is the highest reported for a broadband lithium niobate modulator so far. The design scheme of using high-permittivity cladding may provide a promising solution for improving the integration of photonic devices on the thin-film lithium niobate platform and these devices may serve as fundamental components in large-scale photonic integrated circuits in the future.

Optics,Applied Physics
Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

Sean Nelan,Andrew Mercante,Shouyuan Shi,Peng Yao,Eliezer Shahid,Benjamin Shopp,Cooper Hurley,Mathew Zablocki,Dennis W. Prather

DOI: https://doi.org/10.48550/arXiv.2207.02608

2022-07-06

Abstract:A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and its integration with photonic integrated circuits based in silicon make it an ideal platform for such a device. In this work, a high-extinction dual-output folded electro-optic Mach Zehnder modulator in the silicon nitride and thin-film lithium niobate material system is presented. This modulator has an interaction region length of 11 mm and a physical length of 7.8 mm. The device demonstrates a fiber-to-fiber loss of roughly 12 dB using on-chip fiber couplers and DC half wave voltage (V$\pi$) of less than 3.0 V, or a modulation efficiency (V$\pi\cdot$L) of 3.3 V$\cdot$cm. The device shows a 3 dB bandwidth of roughly 30 GHz. Notably, the device demonstrates a power extinction ratio over 45 dB at each output port without the use of cascaded directional couplers or additional control circuitry; roughly 31 times better than previously reported devices. Paired with a balanced photo-diode receiver, this modulator can be used in various photonic communication systems. Such a detecting scheme is compatible with complex modulation formats such as differential phase shift keying and differential quadrature phase shift keying, where a dual-output, ultra-high extinction device is fundamentally paramount to low-noise operation of the system.

Optics,Applied Physics
Wideband Thin-Film Lithium Niobate Modulator with Low Half-Wave-voltage Length Product

Xuecheng Liu,Bing Xiong,Changzheng Sun,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.3788/col202119.060016

IF: 2.56

2021-01-01

Chinese Optics Letters

Abstract:A novel thin-film lithium niobate (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid wave guide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 mu m, resulting in a low half-wave-voltage length product of only 1.7 V.cm. Capacitively loaded traveling-wave electrodes are employed to reduce the microwave loss, while a quartz substrate is used in place of a silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave voltage of 3.4 V and a merely less than 2 dB roll-off in an electro-optic response up to 67 GHz.
Dual-layer capacitance-loaded thin-film lithium niobate electro-optic modulator with high modulation efficiency

Gongcheng Yue,Hongzhi Yang,Ziyue Zhang,Ting Hao,Lin Xiao,Yang Li

DOI: https://doi.org/10.1364/oe.524932

IF: 3.8

2024-06-11

Optics Express

Abstract:Gongcheng Yue, Hongzhi Yang, Ziyue Zhang, Ting Hao, Lin Xiao, Yang Li Thin film lithium niobate (TFLN) modulators with low driving voltage and high bandwidth are desirable for fiber-optic communication. ... [Opt. Express 32, 23161-23170 (2024)]

optics
Lithium niobate thin film electro-optic modulator

Jikun Liu,Lun Qu,Wei Wu,Chunyan Jin,Zhihao Chen,Zhidong Gu,Weiye Liu,Chenxiong Wang,Dahuai Zheng,Hongde Liu,Wei Cai,Mengxin Ren,Jingjun Xu

DOI: https://doi.org/10.1515/nanoph-2023-0865

IF: 7.5

2024-02-16

Nanophotonics

Abstract:The linear electro-optic effect offers a valuable means to control light properties via an external electric field. Lithium niobate (LN), with its high electro-optic coefficients and broad optical transparency ranges, stands out as a prominent material for efficient electro-optic modulators. The recent advent of lithium niobate-on-insulator (LNOI) wafers has sparked renewed interest in LN for compact photonic devices. In this study, we present an electro-optic modulator utilizing a thin LN film sandwiched between top and bottom gold (Au) film electrodes, forming a Fabry–Pérot (F–P) resonator. This resonator exhibits spectral resonance shifts under an applied electric field, enabling efficient modulation of reflected light strength. The modulator achieved a 2.3 % modulation amplitude under ±10 V alternating voltage. Our approach not only presents a simpler fabrication process but also offers larger modulation amplitudes compared to previously reported metasurface based LN electro-optic modulators. Our results open up new opportunities for compact electro-optic modulators with applications in beam steering devices, dynamic holograms, and spatial light modulators, and more.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Fan Yang,Xiansong Fang,Xinyu Chen,Lixin Zhu,Fan Zhang,Zhangyuan Chen,Yanping Li

DOI: https://doi.org/10.3788/col202220.022502

IF: 2.56

2021-01-01

Chinese Optics Letters

Abstract:High-performance thin film lithium niobate (LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LNMach–Zehnder modulator with a 3 dB bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ∼2.37 V · cm, a high extinction ratio of>23 dB, and the propagation loss of optical waveguides of ∼0.2 dB=cm. Besides, six-level pulse amplitude modulation up to 250 Gb=s is successfully achieved.
Thin Film Lithium Niobate Electro-optic Modulator Based on a Slow Wave Structure

Xuecheng Liu,Bing Xiong,Changzheng Sun,Zhibiao Hao,Lai Wang,Jian Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/cleopr.2020.c4c_3

2020-01-01

Abstract:We propose a thin film lithium niobate modulator based on photonic crystal waveguide and slow wave electrodes. Simulations predict a low half-wave voltage of 2 V as well as an ultrawide-bandwidth over 200 GHz.
Ultra-compact Thin Film Lithium Niobate Electro-optic Modulator with Metal-filled Photonic Crystal Waveguide

Xuecheng Liu,Bing Xiong,Changzheng Sun,Zhibiao Hao,Lai Wang,Jian Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.s4d.5

2020-01-01

Abstract:A novel thin film lithium niobate modulator with metal-filled photonic crystal is proposed to greatly enhance the electro-optical interaction. Half-wave-voltage of 2 V and bandwidth over 200 GHz can be realized with a 500-μm-long device.

Polarization-insensitive Thin-Film Lithium Niobate Electro-Optic Modulator

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Polarization-Insensitive Electrooptic Modulation on Anisotropic Thin-Film Lithium Niobate

Compact Substrate-Removed Thin-Film Lithium Niobate Electro-Optic Modulator Featuring Polarization-Insensitive Operation.

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Single-Sideband Modulation Through Polarization Interband Transition in Thin-Film Lithium Niobate Waveguide

Thin-film Lithium Niobate Polarization Modulator Without Polarization Diversity.

Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum

Broadband Thin-Film Lithium Niobate Electro-Optic Modulator

Low-loss and Broadband Complementary Dual-Output Electro-Optic Modulator Based on Thin-Film Lithium Niobate

High-efficiency electro-optic modulator on thin-film lithium niobate with high-permittivity cladding

Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

Wideband Thin-Film Lithium Niobate Modulator with Low Half-Wave-voltage Length Product

Dual-layer capacitance-loaded thin-film lithium niobate electro-optic modulator with high modulation efficiency

Lithium niobate thin film electro-optic modulator

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Thin Film Lithium Niobate Electro-optic Modulator Based on a Slow Wave Structure

Ultra-compact Thin Film Lithium Niobate Electro-optic Modulator with Metal-filled Photonic Crystal Waveguide